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For fet Found Datasheets File :: 21829 Search Time::1.656ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ452
OCR Text	fet ADE-208-383 1st. Edition Application Low frequency power switching Features * * * * Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain ...
Description	Silicon P-Channel MOS fet
File Size	39.33K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ471
OCR Text	fet High Speed Power Switching ADE-208-540 1st. Edition Features * Low on-resistance R DS(on) = 25 m typ. * 4V gate drive devices. * High speed switching Outline TO-220CFM D G 12 3 S 1. Gate 2. Drain 3. Source 2SJ4...
Description	Silicon P Channel DV-L MOS fet High Speed Power Switching
File Size	46.25K / 10 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SJ475-01
OCR Text	...ansconductance P-channel MOS-fet -60V 0,06 25A 50W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Rating...
Description	FAP-III Series
File Size	296.96K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ479 2SJ479L 2SJ479S
OCR Text	fet High Speed Power Switching ADE-208-541 1st. Edition Features * Low on-resistance R DS(on) = 25 m typ. * 4V gate drive devices. * High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3....
Description	Power switching MOSfet Silicon P Channel DV-L MOS fet High Speed Power Switching Silicon P Channel DVL MOS fet High Speed Power Switching
File Size	37.54K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ483
OCR Text	fet High Speed Power Switching ADE-208-519 1st. Edition Features * Low on-resistance R DS(on) = 0.08 typ (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92MOD. D G 3 ...
Description	Silicon P-Channel MOS fet Silicon P Channel MOS fet High Speed Power Switching
File Size	42.73K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ484
OCR Text	fet High Speed Power Switching ADE-208-501 A 2nd. Edition Features * Low on-resistance R DS(on) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 2 3 1 4 D ...
Description	Silicon P-Channel MOS fet High Speed Power Switching
File Size	42.55K / 9 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ486
OCR Text	fet Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features * Low on-resistance R DS(on) = 0.5 typ. (at V GS = -4V, ID = -100 mA) * 2.5V gate drive devices. * Small package (MPAK). Outline MPAK 3 1 D 2 G 1. So...
Description	RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS fet的低FrequencyPower开 Silicon P Channel MOS fet Low FrequencyPower Switching Silicon P-Channel MOS fet
File Size	40.30K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text	fet INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SJ492 2SJ492-S 2SJ492-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuit...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS fet INDUSTRIAL USE
File Size	70.31K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ493 D11265EJ3V0DS00
OCR Text	fet INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SJ493 PACKAGE Isolated TO-220 DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES * Super low on-state r...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS fet INDUSTRIAL USE
File Size	64.87K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ494 D11266EJ2V0DS00
OCR Text	fet INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.00.3 4.50.2 3.20.2 2.70.2 15.00.3 30.1 40.2 FEATUR...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS fet INDUSTRIAL USE
File Size	68.73K / 8 Page	View it Online	Download Datasheet

For fet Found Datasheets File :: 21829 Search Time::1.656ms
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