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150200 70011 18AV18 BD508 20035 KSC2757 12A01 151M2
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For forward reverse Found Datasheets File :: 138621    Search Time::2.531ms    
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    KP823C09

Fuji Electric
Part No. KP823C09
OCR Text ...cified ) item forward voltage drop reverse current thermal resistance symbol v fm i rrm r th(j-c) conditions i fm =2.5a v r =v rrm junction to case max. 0.9 5.0 10 unit v ma c/w tw=500ns, d...
Description SCHOTTKY BARRIER DIODE

File Size 66.58K  /  3 Page

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    HBAT54C HBAT54S HBAT54A HBAT54

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelect...
Part No. HBAT54C HBAT54S HBAT54A HBAT54
OCR Text ............................. 30 V forward Continuous Current ....................................................................................reverse breakdown Voltage Symbol V(BR)R VF(1) VF(2) VF(3) VF(4) VF(5) IR CT Trr Condition IR=10uA IF...
Description Silicon Schottky Barrier Double Diodes

File Size 22.64K  /  3 Page

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    Sangdest Microelectronic (Nanjing) Co., Ltd
Part No. MBRB30150CT
OCR Text ...enter tap configuration low forward voltage drop high purity, high temperature epoxy encapsulation f or enhanced mechanical strength...reverse voltage (150v) ct/ct-1 = configuration ssg = ssg yy ...
Description SCHOTTKY RECTIFIER

File Size 323.80K  /  6 Page

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    SI1902CDL-T1-GE3

Vishay Siliconix
Part No. SI1902CDL-T1-GE3
OCR Text ...2.5 v, i d = 0.3 a 0.255 0.306 forward transconductance g fs v ds = 10 v, i d = 1 a 3ms dynamic b input capacitance c iss v ds = 10 ...reverse transfer capacitance c rss 7 total gate charge q g v ds = 10 v, v gs = 10 v, i d = 1 ...
Description Dual N-Channel 20 V (D-S) MOSFET
   Dual N-Channel 20 V (D-S) MOSFET

File Size 239.16K  /  11 Page

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    NTB5605 NTB5605P

ON Semiconductor
Part No. NTB5605 NTB5605P
OCR Text ...v, i d = -17 a 120 140 140 m forward transconductance g fs v ds = -10 v, i d = -8.5 a 12 s drain-to-source on voltage v ds(on) v gs = ...reverse transfer capacitance c rss 67 120 total gate charge q g(tot) v gs = -5.0 v, v ds = -48 v, ...
Description Power MOSFET -60 Volt, -18.5 Amp
   Power MOSFET -60 Volt, -18.5 Amp

File Size 86.47K  /  7 Page

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    ES1A-1J

Bruckewell Technology LTD
Continental Device India Limited
Bruckewell Technology L...
Continental Device Indi...
Part No. ES1A-1J
OCR Text ...voltage - 50 to 600 volts forward current - 1.0 ampere features plastic package has underwriters laboratory flammability clas...reverse voltage v rrm 50 100 200 400 600 v maximum rms voltage v rws 35 70 1...
Description SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER

File Size 257.59K  /  2 Page

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    DF2005 DF210

PACELEADER INDUSTRIAL
Part No. DF2005 DF210
OCR Text ...nt by 20% www.paceleader.tw low forward voltage drop,hihg current capability reliable low cost construction utilizing molded plastic techniq...reverse voltage maximum rms voltage maximum dc blocking voltage 0 maximum average forward rectified ...
Description SINGLE-PHASE GLASS PASSIVATED BRIDGE RECTIFIERS

File Size 177.13K  /  2 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...sistance Gate Threshold Voltage forward Transconductance Drain-to-Source Leakage Current Gate-to-Source forward Leakage Gate-to-Source reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Tim...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...sistance Gate Threshold Voltage forward Transconductance Drain-to-Source Leakage Current Gate-to-Source forward Leakage Gate-to-Source reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Tim...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...sistance Gate Threshold Voltage forward Transconductance Drain-to-Source Leakage Current Gate-to-Source forward Leakage Gate-to-Source reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Tim...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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