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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK9518-55
OCR Text	general DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection ...
Description	TrenchMOS transistor Logic level FET
File Size	64.16K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK9520-55
OCR Text	general DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection ...
Description	TrenchMOS transistor Logic level FET
File Size	63.24K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BDP31 BDP31_3
OCR Text	...age (max. 45 V). APPLICATIONS * general purpose medium power applications. DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complement: BDP32. handbook, halfpage BDP31 PINNING PIN 1 2,4 3 base collector emitter ...
Description	NPN medium power transistor From old datasheet system
File Size	44.67K / 8 Page	View it Online	Download Datasheet

				http:// NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK9528-55
OCR Text	general DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection ...
Description	TrenchMOS transistor Logic level FET
File Size	47.98K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK9606-30
OCR Text	general DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using 'trench' technology. The device features very low on-state resistance and has integral zener...
Description	TrenchMOS transistor Logic level FET
File Size	46.20K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK9610-30
OCR Text	general DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using 'trench' technology. The device features very low on-state resistance and has integral zener...
Description	TrenchMOS transistor Logic level FET
File Size	47.74K / 8 Page	View it Online	Download Datasheet

				PANASONIC CORP
Part No.	ELJFAR82MF
OCR Text	...% j k m packaging design no. 3. general us e fc, fa, fb features ? general use wire wound, resin molded chip inductor. ? capable of being re-? ow or ? ow soldered. ? wide line-up from 2520 to 4532 case sizes. ? good for mounting. reco...
Description	1 ELEMENT, 0.82 uH, general PURPOSE INDUCTOR, SMD
File Size	196.66K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK9618-30
OCR Text	general DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using 'trench' technology. The device features very low on-state resistance and has integral zener...
Description	TrenchMOS transistor Logic level FET
File Size	45.63K / 8 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	AD5258BRMZ1-R7 AD5258BRMZ1-RL7 AD5258BRMZ100-R7 AD5258BRMZ10-R7
OCR Text	...gram showing level shifters general des cription the ad5258 provides a compact, nonvolatile 3 mm 4.9 mm pack aged solution for 64 - position adjustment applications. the se devices perform the same electronic adjustment function as...
Description	Nonvolatile, I2C-Compatible 64-Position, Digital Potentiometer
File Size	536.93K / 24 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP SEMICONDUCTORS
Part No.	BUK9618-55 BUK9618-56 BUK9618-55118
OCR Text	general DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener...
Description	TrenchMOS transistor Logic level FET TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET) 57 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	68.29K / 8 Page	View it Online	Download Datasheet

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