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				AD[Analog Devices]
Part No.	ADN2882XCHIPS-WP ADN2882
OCR Text	...Single-layer capacitor Notes minimize all GND bond wire lengths minimize IN, OUT and OUTB bond wire lengths Maintain symmetry between IN and OUT/OUTB bond wires Rev. PrD Nov. 04 2004 \| Page 7 of 10 ADN2882 ASSEMBLY RECOMMENDATIONS ...
Description	4.25 Gbps 3.3V Low Noise Transimpedance Amplifier
File Size	179.83K / 10 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	ADN2882 ADN2882XCHIPS ADN2882ACHIPS
OCR Text	...Single-layer capacitor Notes minimize all GND bond wire lengths minimize IN, OUT and OUTB bond wire lengths Maintain symmetry between IN and OUT/OUTB bond wires Rev. PrD Nov. 04 2004 \| Page 7 of 10 ADN2882 ASSEMBLY RECOMMENDATIONS ...
Description	4.25 Gbps 3.3 V Low Noise Transimpedance Amplifier
File Size	186.38K / 11 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FMS3818KRCNL FMS3818_04 FMS3818 FMS3818KRC FMS381804
OCR Text	...reference connected to VREF. To minimize noise, a 0.1F capacitor should be connected between VREF and ground. ISET is mirrored to each of the GBR output current sources. To minimize noise, a 0.1F capacitor should be connected between the CO...
Description	Triple Video D/A Converters 3 x 8 bit, 180 Ms/s
File Size	477.93K / 13 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NB3N3011DTR2G NB3N3011DTG NB3N3011
OCR Text	...nant crystal and were chosen to minimize the ppm error. Capacitor values can be adjusted slightly for different board layouts to optimize accuracy. 3.3 V VCC 0.01 mF 10 W VCCA 0.01 mF 10 mF Figure 8. Power Supply Filtering C1 3...
Description	3.3 V 100 MHz / 106.25 MHz PureEdge Clock Generator with LVPECL Differential Output(带LVPECL差分输出.3V 100MHz/106.25MHz PureEdge时钟生成 3.300兆赫/ 106.25 MHz的时钟发生器PureEdge与LVPECL差分输出（带的LVPECL差分输出.3 100MHz/106.25MHzPureEdge时钟生成器）
File Size	153.27K / 7 Page	View it Online	Download Datasheet

				http:// ONSEMI[ON Semiconductor]
Part No.	NTD4810NH-1G NTD4810NHT4G NTD4810NH NTD4810NH-35G
OCR Text	minimize Conduction Losses Low Capacitance to minimize Driver Losses Optimized Gate Charge to minimize Switching Losses Low RG These are Pb-Free Devices http://onsemi.com V(BR)DSS 30 V RDS(on) MAX 10 mW @ 10 V 16.7 mW @ 4.5 V D ID MAX 5...
Description	Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK
File Size	85.74K / 8 Page	View it Online	Download Datasheet

				http:// ONSEMI[ON Semiconductor]
Part No.	NTD4813NH NTD4813NHT4G NTD4813NH-1G NTD4813NH-35G
OCR Text	minimize Conduction Losses Low Capacitance to minimize Driver Losses Optimized Gate Charge to minimize Switching Losses Low RG These are Pb-Free Devices http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 13 mW @ 10 V 25.9 mW @ 4.5 V D ...
Description	Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK
File Size	86.70K / 8 Page	View it Online	Download Datasheet

				http:// ONSEMI[ON Semiconductor]
Part No.	NTD4815NH-1G NTD4815NH-35G NTD4815NHT4G NTD4815NH
OCR Text	minimize Conduction Losses Low Capacitance to minimize Driver Losses Optimized Gate Charge to minimize Switching Losses Low RG These are Pb-Free Devices http://onsemi.com V(BR)DSS 30 V 27.7 mW @ 4.5 V D RDS(ON) MAX 15 mW @ 10 V 35 A ID ...
Description	Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK
File Size	85.93K / 8 Page	View it Online	Download Datasheet

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