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  mpak Datasheet PDF File

For mpak Found Datasheets File :: 79+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> |   

    2SC5545ZS-TL-E

Renesas Electronics Corporation
Part No. 2SC5545ZS-TL-E
Description UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SC-61AA, mpak-4
Silicon NPN Epitaxial VHF / UHF wide band amplifier

File Size 79.28K  /  8 Page

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    HZM6.8Z4MWA

Abracon, Corp.
Renesas Electronics Corporation
Part No. HZM6.8Z4MWA
Description 6.8 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE mpak-3
Silicon Planar Zener Diode for Surge Absorb
Diodes>Zener

File Size 78.95K  /  5 Page

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    Hamamatsu Photonics K.K.
Part No. S8119
Description MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (&#181;s) typ: 0.035; Package: mpak 图片集成电路光开

File Size 308.56K  /  4 Page

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    Hamamatsu Photonics
Part No. S6968-01
Description MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: mpak

File Size 92.02K  /  2 Page

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    CRS1106 CRS11

Toshiba Semiconductor
Toshiba Corporation
Toshiba, Corp.
Part No. CRS1106 CRS11
Description Switching Mode Power Supply Applications
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.28 to 7.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.52 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: mpak 开关电源的应用

File Size 172.13K  /  5 Page

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    SKD146-L100 SKD146_12-L100 SKD146_16-L100 SKD146/16-L100 SKD146/12-L100

Semikron International
Part No. SKD146-L100 SKD146_12-L100 SKD146_16-L100 SKD146/16-L100 SKD146/12-L100
Description Transistor; Type: Amplifiers/Bipolar; VCEO (V): 12; Ic (A): 0.075; Pc (W): 0.7; hFE: 100 to 200; fT (GHz) typ: 7.8; Cob (pF) max: 0.9; NF (dB) typ: 1; Package: mpak
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: Cmpak-4
3-Phase Bridge Rectifier IGBT braking chopper

File Size 702.89K  /  4 Page

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    DF2S12S DF3A6.2FE

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S12S DF3A6.2FE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.15 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: mpak 产品使用,但对静电放电(ESD)保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 156.09K  /  3 Page

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    HZM16NB1TR HZM9.1NB1TL HZM15NB2TL-E HZM18NB1

Omron Electronics, LLC
Renesas Electronics Corporation
Part No. HZM16NB1TR HZM9.1NB1TL HZM15NB2TL-E HZM18NB1
Description 15.69 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE mpak-3
8.75 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Silicon Epitaxial Planar Zener Diode for Stabilizer
17.32 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

File Size 206.91K  /  10 Page

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    Silicon Storage Technology, Inc.
Part No. SST29VE010-120-3I-EH SST29LE010-90-4C-N SST29VE010-90-4C-N SST29LE010-90-3I-E SST29VE010-90-3I-E SST29LE010-90-3I-EH SST29VE010-90-3I-EH SST29LE010-90-4I-E SST29VE010-90-4I-E SST29LE010-150-3C-W SST29LE010-250-3C-E SST29LE010-250-3C-U SST29LE010-250-3C-W SST29LE010-250-3C-N SST29LE010-250-3C-P SST29VE010-250-3C-NH SST29LE010-250-3C-NH SST29LE010-120-4I-W SST29LE010-250-4I-W SST29LE010-150-4I-W SST29LE010-200-4I-W SST29LE010-90-4I-W SST29VE010-120-3I-P SST29VE010-200-3I-P SST29VE010-120-3I-WH SST29LE010-90-3I-P SST29LE010-250-3I-P SST29LE010-150-3I-W SST29LE010-200-3I-W SST29VE010-200-3I-W SST29LE010-200-3I-P SST29VE010-250-3I-W SST29VE010-90-4I-W SST29LE010-150-3I-P SST29VE010-150-3I-P SST29VE010-150-3I-W SST29VE010-250-3I-P SST29VE010-90-3I-W SST29VE010-200-3I-E SST29VE010-90-3I-P SST29LE010-250-3I-W SST29LE010-90-3I-W SST29VE010-90-3C-W SST29LE010-250-3C-UH SST29VE010-120-3I-PH SST29LE010-90-3C-U SST29VE010-90-3C-U SST29LE010-90-3C-UH SST29VE010-90-3C-UH SST29VE010-120-3C-UH SST29VE010-200-3C-UH SST29VE010-120-3C-E SST29VE010-250-3C-E SST29LE010-90-3I-NH SST29LE010-150-3I-NH SST29LE010-200-3I-NH SST29LE010-250-3I-NH SST29VE010-120-3I-NH SST29VE010-90-3I-UH SST29VE010-120-3I-UH SS
Description Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise
Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: Cmpak-5V; Remarks: Push-pull type
CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 800; Vio (mV) max: 4; SR (V/µs) typ: 8; Topr (°C): -40 to 85; Package: Mmpak; Pin count: 8; Remarks: Output full swing High slew rate
CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 200; Vio (mV) max: 4; SR (V/µs) typ: 2; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate
Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: mpak-5V; Remarks: Push-pull type
CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 800; Vio (mV) max: 4; SR (V/µs) typ: 8; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate
CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 15; Vio (mV) max: 4; SR (V/µs) typ: 0.125; Topr (°C): -40 to 85; Package: Mmpak; Pin count: 8; Remarks: Output full swing Standard
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: No error against RF noise
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: DIP; Pin count: 8; Remarks: No error against RF noise
CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 15; Vio (mV) max: 4; SR (V/µs) typ: 0.125; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard
CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 100; Vio (mV) max: 4; SR (V/µs) typ: 1; Topr (°C): -40 to 85; Package: Mmpak; Pin count: 8; Remarks: Output full swing Standard
CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 4; SR (V/µs) typ: 0.5; Topr (°C): -40 to 85; Package: Mmpak; Pin count: 8; Remarks: Output full swing Standard
CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 200; Vio (mV) max: 4; SR (V/µs) typ: 2; Topr (°C): -40 to 85; Package: Mmpak; Pin count: 8; Remarks: Output full swing High slew rate
CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 400; Vio (mV) max: 4; SR (V/µs) typ: 4; Topr (°C): -40 to 85; Package: Mmpak; Pin count: 8; Remarks: Output full swing High slew rate
Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: Cmpak-5V; Remarks: Push-pull type
CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 400; Vio (mV) max: 4; SR (V/µs) typ: 4; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate
CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 4; SR (V/µs) typ: 0.5; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard
CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 100; Vio (mV) max: 4; SR (V/µs) typ: 1; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard
Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: mpak-5V; Remarks: Open drain type
Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: Cmpak-5V; Remarks: Open drain type
Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: Cmpak-5V; Remarks: Open drain type
Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: mpak-5V; Remarks: Push-pull type
1 Megabit (128K x 8) Page Mode EEPROM 1兆位128K的8)页模式EEPROM
Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (&#181;A) typ.: 50; Vio (mV) max: 5; Topr (&#176;C): -40 to 85; Package: Cmpak-5V; Remarks: Push-pull type 1兆位28K的8)页模式的EEPROM
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (&#176;C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise 1兆位28K的8)页模式的EEPROM
1 Megabit (128K x 8) Page Mode EEPROM 1兆位28K的8)页模式的EEPROM
1 Megabit (128K x 8) Page Mode EEPROM 1兆位28K的8)页模式EEPROM
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (&#176;C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise 1兆位28K的8)页模式EEPROM
Logic IC; Function: Quad. Differential Line Receivers with 3-state outputs (EIA RS-422A, 423A); Package: DIP; Remarks: Interface IC 1兆位28K的8)页模式的EEPROM
1 Megabit (128K x 8) Page Mode EEPROM 1兆位128K的8)页模式的EEPROM
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (&#176;C): -40 to 85; Package: DIP; Pin count: 8; Remarks: No error against RF noise

File Size 893.50K  /  27 Page

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