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  stm-4 1 Datasheet PDF File

For stm-4 1 Found Datasheets File :: 3442    Search Time::1.734ms    
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    MTP30N06VL MTP30N06VL_D ON2590

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP30N06VL MTP30N06VL_D ON2590
OCR Text sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...4 (c) Motorola TMOS Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MTP30N06VL...
Description From old datasheet system
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

File Size 207.41K  /  8 Page

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    MTP30P06 MTP30P06V MTP30P06V_D ON2592

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP30P06 MTP30P06V MTP30P06V_D ON2592
OCR Text sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 2.3 1.9 175 107 68 0.965 3.0 -- -- -- -- -- C ns Vdc -- --...
Description TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培的RDSon)\u003d 0.080欧姆
From old datasheet system

File Size 190.77K  /  8 Page

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    MTP50N06EL MTP50N06

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP50N06EL MTP50N06
OCR Text sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed...4.5 7.5 -- -- -- nH nH (IS = 50 Adc, VGS = 0 Vdc) (IS = 50 Adc, VGS = 0 Vdc, TJ = 125C) VSD trr ta t...
Description TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

File Size 232.16K  /  8 Page

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    MTP50N06VL MTP50N06VL_D ON2618 MTP50N06

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MTP50N06VL MTP50N06VL_D ON2618 MTP50N06
OCR Text sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...4.5 -- -- nH nH ta tb QRR -- -- -- -- 1.03 0.94 91.1 63.8 27.3 0.299 2.5 -- -- -- -- -- C ns Vdc -- ...
Description From old datasheet system
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

File Size 195.44K  /  8 Page

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    MTP50N06 MTP50N06V MTP50N06V_D ON2619

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MTP50N06 MTP50N06V MTP50N06V_D ON2619
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...4.5 7.5 -- -- nH nH ta tb QRR -- -- -- -- 1.06 0.99 84 73 11 0.28 2.5 -- -- -- -- -- C ns Vdc -- -- ...
Description From old datasheet system
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

File Size 179.25K  /  8 Page

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    MTP50P03HDL ON2621 ON2620

MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP50P03HDL ON2621 ON2620
OCR Text sTM Data Sheet HDTMOS E-FET.TM Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This advanced high-cell density HD...4.5 -- -- nH -- -- -- -- 2.39 1.84 106 58 48 0.246 3.0 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- ...
Description TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM
From old datasheet system

File Size 128.25K  /  8 Page

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    MTP52N06VL MTP52N06VL_D ON2624 ON2623

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP52N06VL MTP52N06VL_D ON2624 ON2623
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...4.5 -- -- nH nH ta tb QRR -- -- -- -- 1.03 0.9 104 63 41 0.28 1.5 -- -- -- -- -- C ns Vdc -- -- -- -...
Description TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM
From old datasheet system

File Size 162.64K  /  8 Page

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    MTP52N06V MTP52N06V_D ON2625 ON2622

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP52N06V MTP52N06V_D ON2625 ON2622
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...4.5 -- -- nH nH ta tb QRR -- -- -- -- 1.0 0.98 100 80 20 0.341 1.5 -- -- -- -- -- C ns Vdc -- -- -- ...
Description TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM
From old datasheet system

File Size 159.45K  /  8 Page

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    MTP5N40E ON2629

Fairchild Semiconductor
Motorola, Inc
Part No. MTP5N40E ON2629
OCR Text sTM Data Sheet TMOS E-FET.TM High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is des...4 mJ THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case Thermal Resistance -- Juncti...
Description From old datasheet system
TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

File Size 258.42K  /  8 Page

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    MTP60N06 MTP60N06HD MTP60N06HD_D ON2633

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP60N06 MTP60N06HD MTP60N06HD_D ON2633
OCR Text sTM Data Sheet HDTMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high-cell density HD...4.5 -- -- nH -- -- -- -- 0.99 0.89 60 36 24 0.143 1.2 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -...
Description From old datasheet system
TMOS POWER FET 60 AMPERES 50 VOLTS
TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

File Size 216.88K  /  8 Page

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For stm-4 1 Found Datasheets File :: 3442    Search Time::1.734ms    
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