Transistor
2SB621, 2SB621A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD592 and 2SD592A...3:Base JEDEC:TO-92 EIAJ:SC-43A
s Electrical Characteristics
Parameter Collector cutoff current C...
...ge VBE Gain bandwidth product f T Collector output capacitance Cob
Notes: 1. The 2SB649 and 2SB649A are grouped by h FE1 as follows. 2. P...3
2SB649, 2SB649A
Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) -3 I...
Transistor
2SB726
Silicon PNP epitaxial planer type
For general amplification
Unit: mm
5.00.2
5.10.2
4.00.2
s Features
q q
...3:Base JEDEC:TO-92 EIAJ:SC-43A
s Electrical Characteristics
Parameter Collector cutoff current C...
...1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t off
Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W)
Collector Current...3
s ms n 1 m= 10 tio era PW Op C) DC = 25 (T C
-1.0 -0.3 Ta = 25C -0.1 1 Shot pulse -0.03 -1
...
Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A
Unit: mm
6.90.1
0.4
q q q
2.40.2 2.00.2 3.50.1
Low noise voltage NV. High foward...
Description
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A...3.00.15 3 2 1
4.0-0.20
0.40.04
emitter voltage 2SB766A Emitter to base voltage Peak collect...
Transistor
2SB767
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD875
Unit: mm
s Featu...3.00.15
4.0-0.20
0.40.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Co...
Transistor
2SB788
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SD958
6.90.1 1.5 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
Unit: mm
s Features
q q q
1.5 R0.9 R0.9
0.85
...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
...sat)(2) VBE(sat)(1) VBE(sat)(2) t on t stg tf
Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) -30 iC(peak) -10
...3 -1.0 -0.3 -0.1
DC ICmax (Continuous) Op
s
1m
=1
er
s
at
0m s
=2
io
...
Transistor
2SB792, 2SB792A
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SD814
2.8 -0.3
+0.2
Unit: mm
s Features
q q q
0.650.15
+0.25 1.5 -0.05
0.650.15
s Ab...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)