...* 2.0** 150 -55 to +150 V V A A w C C
Gate Protect Diode Gate
Drain
Internal Diode
Source Marking : UA3
* Pw 10 ms, Duty Cyc...three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only...
Description
From old datasheet system P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SwITCHING
... Tstg
-60
# 20
V V V A A w w C C A mJ
-20, 0
# 16 # 64
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) C...three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only...
Description
From old datasheet system SwITCHING P-CHANNEL POwER MOS FET INDUSTRIAL USE
...5 2.0 150 -55 to +150 V V V A A w w C C
1.30.2 1.50.2 2.54
2.50.1 0.650.1
1. Gate 2. Drain 3. Source 123
ISOLATED TO-220 (MP-45F...three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only...
Description
From old datasheet system SwITCHING P-CHANNEL POwER MOS FET INDUSTRIAL USE
...5 2.0 150 -55 to +150 V V V A A w w C C
123 0.7 0.1 2.54
13.5 MIN.
2.5 0.1 0.65 0.1 1. Gate 2. Drain 3. Source Drain Body Diode Sour...three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only...
Description
From old datasheet system MOS Field Effect Power Transistors SwITCHING P-CHANNEL POwER MOS FET INDUSTRIAL USE
...1.25 150 -55 to +150
V V A A w w C C
Gate Gate Protection Diode Marking: XB
Body Diode
Source
Total Power Dissipation Total P...three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only...
Description
Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SwITCHING
... Tstg
2.0 150 -55 to +150
w C C
Document No. D11233EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
1996
2...three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only...
Description
N-CHANNEL MOS FET FOR HIGH-SPEED SwITCHING N沟道场效应晶体管的高速开 From old datasheet system N-channel MOS type field effect transistor
... Tstg
2.0 150 -55 to +150
w C C
Document No. D11235EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan
(c)
19...three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only...
Description
N-CHANNEL MOS FET FOR HIGH-SPEED SwITCHING N沟道场效应晶体管的高速开 From old datasheet system
... -65 to 150 0 to 70
Unit V V w C C C C -
Remark KM62256CL KM62256CLE KM62256CLI -
Operating Temperature
TA
-25 to 85 -40 to 85
Soldering temperature and time
TSOLDER
260C, 10sec(Lead Only)
1. Stresses greater than...
Description
CONNECTOR ACCESSORY From old datasheet system 32Kx8 bit Low Power CMOS Static RAM
...ynamic power dissipation (PD in w): PD = CPD x VCC2 x fi + (CL x VCC2 x fo) where: fi = input frequency in MHz fo = output frequency in MHz (CL x VCC2 x fo) = sum of outputs CL = output load capacitance in pF VCC = supply voltage in V 2. ...
Description
74HC/HCT138; 3-to-8 line decoder/demultiplexer; inverting 3-to-8 line decoder/demultiplexer inverting
...ynamic power dissipation (PD in w): PD = CPD x VCC2 x fi + (CL x VCC2 x fo) where: fi = input frequency in MHz. fo = output frequency in MHz. CL = output load capacitance in pF. VCC = supply voltage in V. (CL x VCC2 x fo) = sum of outputs...