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International Business Machines, Corp.
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| Part No. |
IBM041814PQKB
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| OCR Text |
...e clk cs2 cs2 cs adsp adsc ad v we oe dq operation l ? h hxl lxxxx high-z deselected cycle l ? h xl l lxxxx high-z deselected cycle l ? h h ...dd -0.5 to 4.6 v 1 input voltage v in -0.5 to 6.0 v 1 output voltage v out -0.5 to v dd +0.5 v1 oper... |
| Description |
64K X 18 BURST SRAM(1M4K X 18）高性能同步可猝发CMOS静态RAM) 64K的X 18爆的SRAM00万（64K的X 18）高性能同步可猝发的CMOS静态RAM）的
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| File Size |
114.32K /
14 Page |
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it Online |
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QIMONDA AG
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| Part No. |
HYB18TC256800AF-3.7
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| OCR Text |
...2007-01-22 2 03062006-h3v1-xjt4 we listen to your comments any information within this document that yo u feel is wrong, unclear or missing ...dd pwr ? power supply a7, b2, b8, d2, d8 v ssq pwr ? i/o driver power supply a3, e3, j1, k9 v ss pw... |
| Description |
32M X 8 DDR DRAM, 0.5 ns, PBGA60
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| File Size |
1,885.92K /
60 Page |
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it Online |
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Toshiba Corporation
Toshiba, Corp.
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| Part No. |
TC58FVM6T2AXB65 TC58FVM6T2AFT65 TC58FVM6B2AXB65 TC58FVM6B2AFT65 TC58FVM62A
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| OCR Text |
... byte word/byte select input we write enable input by / ry ready/busy output reset hardware reset input /acc wp write protect / program acceleration input v dd power supply v ss ground pin assignment (top view) ... |
| Description |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
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| File Size |
759.58K /
61 Page |
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it Online |
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Zentel Electronics
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| Part No. |
A2V64S40CTP
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| OCR Text |
...command code. /cas, /ras, /we input command inputs: /cas, /ras, and /we (along with /cs) define the command being entered. ldqm,...dd q supply dq power: provide isolated power to dqs for improved noise immunity. v ss q sup... |
| Description |
64Mb Synchronous DRAM
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| File Size |
738.26K /
38 Page |
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it Online |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HMT325S6BFR6C-H9
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| OCR Text |
... event temperature event pin 1 we write enable 1 test logic analyzer specific test pin (no connect on sodimm) 1 s [1:0] chip selects 2 ...dd core and i/o power 18 a10/ap address input/autoprecharge 1 v ss ground 52 a12/bc address in... |
| Description |
256M X 64 DDR DRAM MODULE, DMA204
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| File Size |
474.71K /
54 Page |
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it Online |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5DU561622ELTP-L
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| OCR Text |
...dq7 nc vddq ldqs nc vdd nc ldm /we /cas /ras /cs nc ba0 ba1 a10/ap a0 a1 a2 a3 vdd vss dq15 vssq dq14 dq13 vddq dq12 dq11 vssq dq10 dq9 vddq...dd /v ss supply power supply for internal circuits and input buffers. v ddq /v ssq supply power sup... |
| Description |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
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| File Size |
235.08K /
29 Page |
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it Online |
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Mosel Vitelic Corp
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| Part No. |
V58C2256164S V58C2256804S
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| OCR Text |
...c dq1 vssq nc nc nc vddq nc vdd we cas ras ba1 ba0 a0 a10/ap a2 a1 a5 a6 a7 a8 a9 cs vref a12 nc a4 a3 nc vddq vssq dq2 nc nc cke a11...dd power (+2.5v) v ss ground v ddq power for i/o?s (+2.5v) v ssq ground for i/o?s nc not connected v... |
| Description |
HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
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| File Size |
807.09K /
61 Page |
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it Online |
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