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				Hitachi,Ltd. Hitachi Semiconductor
Part No.	2SK1838 2SK1838L 2SK1838S
OCR Text	...S V(BR)GSS I GSS 250 30 -- -- 2.0 0.3 -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.5 5.5 60 30 5 5 6 10 4.5 0.96 160 Max -- -- 10 100 3.0 -- 8.0 -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 1 A, VGS = 0...
Description	CHOKE COIL 47UH 900MA SMD Silicon N-Channel MOS FET
File Size	45.69K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SK2356 2SK2356-Z 2SK2355-Z 2SK2355 2SK2356-Z-E1
OCR Text	...tage switching applications. 3.0 0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 3.6 0.2 10.0 4.8 MAX. 1.3 0.2 5.9 MIN. 123 * Low On-Resistance 2SK2355: RDS(on) = 1.4 (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 (VGS = 1...
Description	N-channel enhancement type DMOS SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	63.55K / 8 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2766-01R
OCR Text	...h=25C Min. 800 3,5 Typ. 4,0 10 0,2 10 1,62 4 900 130 70 25 80 70 40 1,0 750 8,5 Max. 4,5 500 1,0 100 2,0 7 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics Item Thermal Resistance Symbol R th(...
Description	N-channel MOS-FET
File Size	269.81K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	UNR2222 UNR222X UN2221 UN2222 UN2223 UN2224 UN222X UNR2224
OCR Text	...king and magazine packing 1 0.40+0.10 -0.05 3 1.50+0.25 -0.05 2.8+0.2 -0.3 0.16+0.10 -0.06 2 (0.65) (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10 Resistance by Part Number * UNR2221 * UNR2222 * UNR2223 * UNR2224 Marking Symbol (...
Description	Silicon NPN epitaxial planar type
File Size	127.35K / 6 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SK3454
OCR Text	...w on-state resistance RDS(on) = 0.63 MAX. (VGS = 10 V, ID = 4.0 A) Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) Built-in gate protection diode *Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to ...
Description	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
File Size	63.10K / 8 Page	View it Online	Download Datasheet

				NEC
Part No.	2SK3457
OCR Text	...VDD = 450 V, VGS = 10 V, ID = 5.0 A) * Gate voltage rating 30 V * Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A) * Avalanche capability ratings * Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to...
Description	SWITCHING N-CHANNEL POWER MOSFET
File Size	75.40K / 8 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SK3458 2SK3458-S 2SK3458-ZK
OCR Text	...VDD = 450 V, VGS = 10 V, ID = 6.0 A) * Gate voltage rating 30 V * Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A) * Avalanche capability ratings * Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25C) ...
Description	SWITCHING N-CHANNEL POWER MOSFET
File Size	80.50K / 8 Page	View it Online	Download Datasheet

				Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
Part No.	2SK3932-01MR
OCR Text	...ngs 500 500 11 44 30 11 453.9 6.0 20 5 60 2.16 +150 -55 to +150 2 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Note 1 Note 2 Note 3 Gate(G) Source(S) Note 1:Tch < 150C,Repetitive and Non-repeti...
Description	N-CHANNEL SILICON POWER MOSFET 11 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	102.27K / 4 Page	View it Online	Download Datasheet

				NEC
Part No.	2SK4027
OCR Text	... PACKAGE DRAWING (Unit: mm) 0.4 +0.1 -0.05 0.16 -0.06 +0.1 * High gain -1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 k) * Low noise -115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 k) 2.0 MIN. FEATURES Marking 3 1.5 2 2.0 MIN. ...
Description	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
File Size	126.02K / 5 Page	View it Online	Download Datasheet

				NEC
Part No.	2SK4028
OCR Text	...PACKAGE DRAWING (Unit: mm) 1.2 0.1 0.3 -0.05 +0.1 MAX. 0.33 FEATURES * High gain 1.2 0.1 * Low noise -115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 k) * Ultra thin thickness package t = 0.3 mm TYP. 0.8 0.1 -1.0 dB (VDD = 2.0 V,...
Description	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
File Size	126.20K / 5 Page	View it Online	Download Datasheet

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