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04012 TS271CAC 2SA2070 CD54AC04 EMB51 CT100 8536K33N 5KE14
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  10v Datasheet PDF File

For 10v Found Datasheets File :: 81010    Search Time::2.094ms    
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    2SB935 2SB935A

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SB935 2SB935A
OCR Text ...A IC = -7A, IB = - 0.23A VCE = -10v, IC = - 0.5A, f = 10MHz VCB = -10v, IE = 0, f = 1MHz 150 200 0.1 0.5 0.1 -20 -40 45 90 260 - 0.6 -1.5 V V MHz pF s s s min typ max -50 -50 -50 Unit A A V Forward current transfer ratio Collector to emi...
Description Silicon PNP epitaxial planar type(For low-voltage switching)

File Size 56.85K  /  3 Page

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    2SB936 2SB936A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB936 2SB936A
OCR Text ... IC = -10A, IB = - 0.33A VCE = -10v, IC = - 0.5A, f = 10MHz VCB = -10v, IE = 0, f = 1MHz 100 400 0.1 0.5 0.1 -20 -40 45 90 260 - 0.6 -1.5 V V MHz pF s s s min typ max -50 -50 -50 Unit A A V Forward current transfer ratio Collector to emi...
Description Silicon PNP epitaxial planar type(For low-voltage switching)

File Size 57.13K  /  3 Page

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    HDAS-16MC HDAS-16/883 HDAS-16MM

Murata Power Solutions Inc.
Part No. HDAS-16MC HDAS-16/883 HDAS-16MM
OCR Text ...-scale input range from 50mV to 10v Three-state outputs 16 S.E. or 8 differential input channels Auto-sequencing channel addressing MIL-STD-883 versions No missing codes GENERAL DESCRIPTION Using thin and thick-film hybrid technology, ...
Description
File Size 171.78K  /  7 Page

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    Kersemi Electronic Co., Ltd.
Part No. IRFZ48VPBF
OCR Text 10v 72 i d @ t c = 100c continuous drain current, v gs @ 10v 51 a i dm pulsed drain current 290 p d @t c = 25c power dissipation 150 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche ene...
Description Advanced Process Technology

File Size 3,101.83K  /  8 Page

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    2SB940 2SD1264A 2B940A 2SD1264

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SB940 2SD1264A 2B940A 2SD1264
OCR Text ...B = 0 IE = -500A, IC = 0 VCE = -10v, IC = -150mA VCE = -10v, IC = -400mA VCE = -10v, IC = -400mA IC = -500mA, IB = -50mA VCE = -10v, IC = - 0.5A, f = 10MHz min typ max -50 -50 Unit A A V V V -200 -150 -180 -6 60 50 -1 -1 30 2...
Description Silicon PNP epitaxial planar type(For power amplification)

File Size 44.67K  /  2 Page

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    IRFZ48VPBF

International Rectifier
Part No. IRFZ48VPBF
OCR Text 10v 72 i d @ t c = 100c continuous drain current, v gs @ 10v 51 a i dm pulsed drain current 290 p d @t c = 25c power dissipation 150 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche ene...
Description Advanced Process Technology

File Size 212.27K  /  8 Page

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    CREE
Part No. UPF1060
OCR Text ...S = 0) Threshold Voltage (VDS = 10v, IDS = 1mA) Gate Quiescent Voltage (VDS = 26 V, IDS = 400mA) Drain to Source On Voltage (VGS = 10v, IDS = 1A Forward Transconductance (VDS = 10v, ID = 5A) Symbol BVDSS IDSS IGSS VTH VGS(on) VDS(on) GM Min...
Description Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS

File Size 273.91K  /  10 Page

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    CREE
Part No. UPF1080
OCR Text ...S = 0) Threshold Voltage (VDS = 10v, IDS = 1mA) Gate Quiescent Voltage (VDS = 26 V, IDS = 500mA) Drain to Source On Voltage (VGS = 10v, IDS = 1A Forward Transconductance (VDS = 10v, ID = 5A) Symbol BVDSS IDSS IGSS VTH VGS(on) VDS(on) GM Min...
Description Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS

File Size 233.05K  /  10 Page

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