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Kersemi Electronic Co., Ltd.
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Part No. |
IRFZ48VPBF
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OCR Text |
10v 72 i d @ t c = 100c continuous drain current, v gs @ 10v 51 a i dm pulsed drain current 290 p d @t c = 25c power dissipation 150 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche ene... |
Description |
Advanced Process Technology
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File Size |
3,101.83K /
8 Page |
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it Online |
Download Datasheet |
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CREE
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Part No. |
UPF1060
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OCR Text |
...S = 0) Threshold Voltage (VDS = 10v, IDS = 1mA) Gate Quiescent Voltage (VDS = 26 V, IDS = 400mA) Drain to Source On Voltage (VGS = 10v, IDS = 1A Forward Transconductance (VDS = 10v, ID = 5A) Symbol BVDSS IDSS IGSS VTH VGS(on) VDS(on) GM Min... |
Description |
Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
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File Size |
273.91K /
10 Page |
View
it Online |
Download Datasheet |
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CREE
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Part No. |
UPF1080
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OCR Text |
...S = 0) Threshold Voltage (VDS = 10v, IDS = 1mA) Gate Quiescent Voltage (VDS = 26 V, IDS = 500mA) Drain to Source On Voltage (VGS = 10v, IDS = 1A Forward Transconductance (VDS = 10v, ID = 5A) Symbol BVDSS IDSS IGSS VTH VGS(on) VDS(on) GM Min... |
Description |
Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
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File Size |
233.05K /
10 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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