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  144mb Datasheet PDF File

For 144mb Found Datasheets File :: 296    Search Time::2.203ms    
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    K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R2716

Sunon, Inc.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NBMCCG6
OCR Text ... * DQA8/DQB8 are just used for 144mb RDRAM. These two pins are NC(No Connection) in 128Mb RDRAM. b. Top marking example of mirrored package SAMSUNG 001 K4Rxxxx69A-Mxxx M A B C D E F G H J For mirrored...
Description 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256 × 16/18位2 * 16属银行直接RDRAMTM

File Size 4,066.36K  /  64 Page

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    KM416RD8ACD-RK70 KM416RD8ACD-RK80 KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD2D KM416RD2C KM418RD4C KM416RD8D KM418RD4D KM

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM416RD8ACD-RK70 KM416RD8ACD-RK80 KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD2D KM416RD2C KM418RD4C KM416RD8D KM418RD4D KM416RD4D KM418RD2C KM416RD2D KM416RD8C KM418RD8C KM418RD8D KM418RD2AC KM418RD8ACD-RG60 KM416RD8ACDB-RCG60
OCR Text ... * DQA8/DQB8 are just used for 144mb RDRAM. These two pins are NC(No Connection) in 128Mb RDRAM. b. Top marking example of mirrored package SEC KOREA KM4xxRD8AD M A B C D E F G H J For mirrored packag...
Description 128/144mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 128/144mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM
24.9K 1% 1/4W -200 TO 500 PPM/C MF 128/144mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM
BACKSHELL
CLAMP

File Size 4,061.75K  /  64 Page

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    R1Q4A3636BBG-60R R1Q4A3618BBG-60R

Renesas Electronics Corporation
http://
Part No. R1Q4A3636BBG-60R R1Q4A3618BBG-60R
OCR Text ...igher density SRAMs (i.e. 72Mb 144mb 288Mb): (9A 3A 10A) 2A 7A 5B. REJ03C0343-0003 Rev.0.03 Apr.11, 2008 page 3 of 24 R1Q4A3636B/R1Q4A3618B Pin Description Name I/O type Descriptions Synchronous address inputs: These inputs ...
Description 36-Mbit DDRII SRAM 2-word Burst

File Size 224.83K  /  26 Page

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    R1Q5A3636BBG-60R R1Q5A3618BBG-60R

Renesas Electronics Corporation
http://
Part No. R1Q5A3636BBG-60R R1Q5A3618BBG-60R
OCR Text ...igher density SRAMs (i.e. 72Mb 144mb 288Mb): (9A 3A 10A) 2A 7A 5B. REJ03C0344-0003 Rev.0.03 Apr.11, 2008 page 3 of 23 R1Q5A3636B/R1Q5A3618B Pin Description Name SAx I/O type Input Descriptions Synchronous address in...
Description 36-Mbit DDRII SRAM 4-word Burst

File Size 336.60K  /  25 Page

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    K7I163682B06 K7I161882B

Samsung semiconductor
Part No. K7I163682B06 K7I161882B
OCR Text ... for 32Mb, 10A for 72Mb, 2A for 144mb . 2. BW0 controls write to DQ0:DQ8, BW1 controls write to DQ9:DQ17, BW2 controls write to DQ18:DQ26 and BW3 controls write to DQ27:DQ35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA0 SA DQ0-35 PIN NUMBE...
Description 512Kx36 & 1Mx18 DDRII CIO b2 SRAM

File Size 411.65K  /  18 Page

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    K7I643682M07 K7I641882M

Samsung semiconductor
Part No. K7I643682M07 K7I641882M
OCR Text ...er density address, i.e. 2A for 144mb. 2. BW0 controls write to DQ0:DQ8, BW1 controls write to DQ9:DQ17, BW2 controls write to DQ18:DQ26 and BW3 controls write to DQ27:DQ35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA0 SA DQ0-35 PIN NUMBER...
Description 2Mx36 & 4Mx18 DDRII CIO b2 SRAM

File Size 413.02K  /  18 Page

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    K7J643682M07 K7J641882M

Samsung semiconductor
Part No. K7J643682M07 K7J641882M
OCR Text ...r density address, i.e. 10A for 144mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA D0-35 PIN NU...
Description 2Mx36 & 4Mx18 DDR II SIO b2 SRAM

File Size 429.81K  /  18 Page

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    K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682M-EC160 K7R643682M-FC160 K7R643682M-EC250 K7R643682M-FI250 K7R643682M-

Samsung semiconductor
Part No. K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682M-EC160 K7R643682M-FC160 K7R643682M-EC250 K7R643682M-FI250 K7R643682M-FC20T
OCR Text ...r density address, i.e. 10A for 144mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA D0-35 PIN NU...
Description 2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
2M X 36 QDR SRAM, 0.5 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165

File Size 457.02K  /  20 Page

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    K7R643684M07 K7R641884M K7R641884M-FC200 K7R641884M-FI250

Samsung semiconductor
Part No. K7R643684M07 K7R641884M K7R641884M-FC200 K7R641884M-FI250
OCR Text ...r density address, i.e. 10A for 144mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35. PIN NAME SYMBOL K, K C, C CQ, CQ Doff SA D0-35 PIN NU...
Description 2Mx36 & 4Mx18 QDR II b4 SRAM
4M X 18 QDR SRAM, 0.45 ns, PBGA165

File Size 446.19K  /  19 Page

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    K7S3236T4C08 K7S3218T4C

Samsung semiconductor
Part No. K7S3236T4C08 K7S3218T4C
OCR Text ...ress, i.e. 3A for 72Mb, 10A for 144mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35. PIN NAME SYMBOL K, K QVLD CQ, CQ Doff SA D0-35 PIN NU...
Description 1Mx36 & 2Mx18 QDR II b4 SRAM

File Size 440.83K  /  20 Page

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