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2D100 CD214A EUA2012A 30N06 HM6285 D12114 BAS32 UPD65655
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  512m-bit Datasheet PDF File

For 512m-bit Found Datasheets File :: 452    Search Time::1.938ms    
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    K9K8G08U0B-PIB0000

Samsung semiconductor
Part No. K9K8G08U0B-PIB0000
OCR Text ...it nand flash memory with spare 512m-bit. its na nd cell provides the most cost-effecti ve solution for the solid state application mar- ket. a program operation can be performed in typical 200 s on the (2k+64)byte page and an erase opera...
Description 1G x 8 / 2G x 8 Bit NAND Flash Memory

File Size 1,036.01K  /  48 Page

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    TC58NVG0S3HBAI4 TC58NVG1S3HTA00 TC58NVG0S3HBAI6 TC58NVG0S3HTA00 TC58NVG0S3HTAI0 TC58NVG1S3EBAI4 TC58NVG1S3ETA00 TC58NVG1

Toshiba Semiconductor
Part No. TC58NVG0S3HBAI4 TC58NVG1S3HTA00 TC58NVG0S3HBAI6 TC58NVG0S3HTA00 TC58NVG0S3HTAI0 TC58NVG1S3EBAI4 TC58NVG1S3ETA00 TC58NVG1S3ETAI0 TC58NVG1S3HBAI6 TC58NVG1S3HTAI0 TC58NVG2S3EBAI5 TC58NVG2S0FTA00 TC58NVG2S3ETA00 TC58NVG2S3ETAI0 TC58DVG02D5BAI4 TC58DVG02D5BAI6 TC58DVG02D5TA00 TC58DVG02D5TAI0 TC58NVM9S3EBAI4 TC58NYM9S3EBAI4 TC58NVM9S3EBAI6 TC58NYM9S3EBAI6 TC58NVM9S3ETA00 TC58NVM9S3ETAI0 TC58NYG0S3HBAI6 TC58NYG0S3HBAI4 TC58NYG1S3EBAI4 TC58NYG2S3EBAI5 TC58NYG1S3HBAI6 TC58DYG02D5BAI4
OCR Text ...me erase time min ns typ s s ms 512m 43 2048 +64 8 128k +4k 8 2.7 to 3.6 0 to 70 x8 tsop i 48-p-1220- 0.50 tc58nvm9s3eta00 25 25 300 2.5 -40 to 85 tc58nvm9s3etai0 25 25 300 2.5 p-tfbga63-0911- 0.80cz tc58nvm9s3ebai4 25 25 300 2.5 p-vfbga6...
Description NAND Flash Memory(SLC Middle Capacity)
   NAND Flash Memory(SLC Middle Capacity)

File Size 69.64K  /  3 Page

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    Samsung Electronics Inc
Part No. K9F1208U0M-YIB0 K9F1208U0M-YCB0
OCR Text ...s & Decoders FLASH MEMORY 512M + 16M Bit NAND Flash ARRAY A0 - A7 (512 + 16)Byte x 131072 Page Register & S/A A8 Command Command Register Y-Gating I/O Buffers & Latches VCC VSS I/0 0 I/0 7 CE RE WE Control Log...
Description EEPROM - Datasheet Reference
From old datasheet system

File Size 522.24K  /  40 Page

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