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D3055 BT151X KBK10B PT2250A M38C81M2 40N25 M38C81M2 90583C
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  52.0v. Datasheet PDF File

For 52.0v. Found Datasheets File :: 369    Search Time::1.25ms    
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    FS6M12653RTC FS6M12653RTCTU FS6M12653RTCYDT

FAIRCHILD[Fairchild Semiconductor]
Part No. FS6M12653RTC FS6M12653RTCTU FS6M12653RTCYDT
OCR Text ...V, ID=250A VDS=650V, VGS=0V VDS=520V VGS=0V, TC=125C VGS=10V, ID=1.8A VDS=50V, ID=1.8A VGS =0V, VDS=25V, f = 1MHz VDD=325V, ID=6.5A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=6.5A, VDS=520V (MOS...
Description 12A/650V 70KHz Power Switch
Fairchild Power Switch(FPS)

File Size 548.46K  /  10 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS7N65B JCS7N65CB-O-C-N-B JCS7N65FB-O-F-N-B
OCR Text ...S VDS=650V,VGS=0V, TC=25 VDS=520V, TC=125 - - 10 100 100 A A nA IGSSF VDS=0V, VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=3.5A - 1.1 1.3 gfs VDS = 40V...
Description N-CHANNEL MOSFET

File Size 591.71K  /  10 Page

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    ST Microelectronics
Part No. P9NC65FP
OCR Text ...e test circuit, Figure 3) VDD = 520V, ID = 9 A, VGS = 10V Min. Typ. 28 15 44 10.5 19.5 62 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-Off Delay Time Fall Time Off-voltage Rise Time Fall Time Cr...
Description Search --To STP9NC65FP

File Size 266.34K  /  9 Page

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    KEC
Part No. 7D0N65F1
OCR Text ...tance Output Capacitance VDS=520V, ID=7.0A VGS=10V (Note4,5) - 32 5.4 12.6 20 40 125 80 1310 113 11.4 40 45 90 260 170 1700 147 14.8 pF ns nC VDD=325V RL=46 RG=25 (Note4,5) - VDS=25V, VGS=0V, f=1.0MHz - Reverse Tr...
Description Search --To KHB7D0N65F1

File Size 470.73K  /  7 Page

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    15N65L-T47-T 15N65G-T47-T 15N65L-TF1-T 15N65G-TF1-T

Unisonic Technologies
Part No. 15N65L-T47-T 15N65G-T47-T 15N65L-TF1-T 15N65G-TF1-T
OCR Text ...Source Leakage Current IDSS VDS=520V, TC=125C Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A Drain-Source On-State Resistance RDS(ON) VG...
Description 15 Amps, 650 Volts N-CHANNEL MOSFET

File Size 162.81K  /  7 Page

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    15N60L-T47-T 15N60G-T47-T

Unisonic Technologies
Part No. 15N60L-T47-T 15N60G-T47-T
OCR Text ...Source Leakage Current IDSS VDS=520V, TC=125C Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A Drain-Source On-State Resistance RDS(ON) VG...
Description 15 Amps, 600 Volts N-CHANNEL MOSFET

File Size 157.28K  /  6 Page

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    HFS5N65S

SemiHow Co.,Ltd.
Part No. HFS5N65S
OCR Text ....5 --- nC nC nC VDS = 520V, ID = 4.2 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current S...
Description 650V N-Channel MOSFET

File Size 774.03K  /  7 Page

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    HFS8N65S

SemiHow Co.,Ltd.
Part No. HFS8N65S
OCR Text ...29 --- nC nC nC VDS = 520V, ID = 7.2 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current S...
Description 650V N-Channel MOSFET

File Size 784.25K  /  7 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. SSP1N50B
OCR Text 520V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimi...
Description 520V N-Channel MOSFET

File Size 626.90K  /  8 Page

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    HFP8N65S

SemiHow Co.,Ltd.
Part No. HFP8N65S
OCR Text ...29 --- nC nC nC VDS = 520V, ID = 7.2 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current S...
Description 650V N-Channel MOSFET

File Size 842.20K  /  8 Page

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