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60a 40v Datasheet PDF File

For 60a 40v Found Datasheets File :: 313 Search Time::1.063ms
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				Intersil Corporation
Part No.	RFG60P05E
OCR Text	60a, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET This is a P-Channel power MOSFET manufactured using the MegaFET process. This proces...40v, ID = 60a, RL = 0.67 Ig(REF) = -4mA TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS...
Description	60a/ 50V/ 0.030 Ohm/ ESD Rated/ P-Channel Power MOSFET 60a, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET
File Size	93.63K / 7 Page	View it Online	Download Datasheet

				SIPEX[Sipex Corporation]
Part No.	SP691A05 SP800MET_TR SP691A SP691ACN SP691ACN_TR SP691ACP SP691ACT SP691ACT_TR SP691AEN SP691AEN_TR SP691AEP SP691AET SP691AET_TR SP693A SP693ACN SP693ACN_TR SP693ACP SP693ACT SP693ACT_TR SP693AEN SP693AEN_TR SP693AEP SP693AET SP693AET_TR SP800L SP800LCN SP800LCN_TR SP800LCP SP800LCT SP800LCT_TR SP800LEN SP800LEN_TR SP800LEP SP800LET SP800LET_TR SP800M SP800MCN SP800MCN_TR SP800MCP SP800MCT SP800MCT_TR SP800MEN SP800MEN_TR SP800MEP SP800MET
OCR Text	...6s Or Adjustable Watchdog Time 60a Maximum Operating Supply Current 2.0A Maximum Battery Backup Current 0.1A Maximum Battery Standby Curr...40v 4.65V 4.40v RESET Accuracy +125mV +125mV +50mV +50mV PFI Accuracy +4% +4% +1% +1% Backu...
Description	Low Power Microprocessor Supervisory with Battery Switch-Over
File Size	238.73K / 24 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKW50N60T Q67040S4718
OCR Text	...CURRENT 10s 10A 50s 60a 40A 20A 0A 100H z Ic 1ms 1A DC 10ms Ic 1kH z 10kH z 100kH z 1V 10V 100V 1000V f...40v QGE, GATE CHARGE Figure 17. Typical gate charge (IC=50 A) VCE, COLLECTOR-EMITTER VOLTAGE F...
Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	413.27K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4714 IKP04N60T
OCR Text	...ctor current VGE(th) ICES I C = 60a,V C E =V G E V C E = 600V , V G E = 0V T j = 25 C T j = 17 5 C Gate-emitter leakage current Transconduct...40v 50V 60V 70V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=4 A) VCE, COLLECTOR-EMITTE...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	358.64K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4717 IKW30N60T
OCR Text	... IC, COLLECTOR CURRENT 70A 60a 50A 40A 30A 20A 10A 0A 100H z T C =110C T C =80C 10A 50s Ic 1A DC 1ms 10ms Ic 1kH z 10kH...40v QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A) VCE, COLLECTOR-EMITTER VOLTAGE F...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极 From old datasheet system
File Size	394.33K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T
OCR Text	... IC, COLLECTOR CURRENT 70A 60a 50A 40A 30A 20A 10A 0A 100H z T C =110C T C =80C 10A 50s Ic 1A DC 1ms 10ms Ic 1kH z 10kH...40v QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A) VCE, COLLECTOR-EMITTER VOLTAGE F...
Description	1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
File Size	375.15K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1104PBF IRF1104PBF-15
OCR Text	... --- --- 0.009 VGS = 10V, ID = 60a 2.0 --- 4.0 V VDS = VGS, ID = 250A 37 --- --- S VDS = 25V, ID = 60a --- --- 25 VDS = 40v, VGS = 0V A --- --- 250 VDS = 32V, VGS = 0V, TJ = 150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- --- 93...
Description	HEXFET POWER MOSFET ( VDSS = 40v , RDS(on) = 0.009Ω , ID = 100A ) HEXFET POWER MOSFET ( VDSS = 40v , RDS(on) = 0.009ヘ , ID = 100A ) Advanced Process Technology
File Size	180.25K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STD60NF55L-1 STD60NF55LT4 STD60NF55L06 STD60NF55L
OCR Text	60a - DPAK/IPAK STripFETTM II Power MOSFET General features Type STD60NF55L-1 STD60NF55L VDSS 55V 55V RDS(on) <0.015 <0.015 ID ...40v, ID = 60a, VGS = 5V, RG = 4.7 (see Figure 13) 1. Pulsed: Pulse duration = 300 s, duty cycle 1...
Description	N-channel 55V - 0.012Ω - 60a - DPAK/IPAK STripFET II Power MOSFET N-channel 55V - 0.012ヘ - 60a - DPAK/IPAK STripFET⑩ II Power MOSFET
File Size	402.33K / 14 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STD60NF55LA STD60NF55LAT4
OCR Text	60a - DPAK STripFETTM II Power MOSFET General features Type STD60NF55LA VDSS 55V RDS(on) <0.015 ID 60a Low threshold drive ...40v, ID = 60a, VGS = 5V, RG = 4.7 (see Figure 14) 1. Pulsed: Pulse duration = 300 s, duty cycle 1...
Description	N-channel 55V - 0.012Ω - 60a - DPAK STripFET II Power MOSFET N-channel 55V - 0.012ヘ - 60a - DPAK STripFET⑩ II Power MOSFET
File Size	303.17K / 14 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	BUZ11
OCR Text	...25oC TC = 25oC TJ = 25oC, ISD = 60a, VGS = 0V TJ = 25oC, ISD = 30A, dISD/dt = 100A/s, VR = 30V MIN TYP 1.7 200 0.25 MAX 30 120 2.6 UNITS A A...40v 5 100 10-1 0 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) 3.0 0 0 ...
Description	30A, 50V, 0.040 Ohm, N-Channel Power MOSFET
File Size	44.96K / 6 Page	View it Online	Download Datasheet

For 60a 40v Found Datasheets File :: 313 Search Time::1.063ms
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