| |
|
 |
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGFS45V2527A
|
| OCR Text |
matched GaAs FET DESCRIPTION
The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
176.+... |
| Description |
2.5 - 2.7GHz BAND 32W INTERNALLY matched GaAs FET
|
| File Size |
248.54K /
3 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGFS45V2325A_04 MGFS45V2325A MGFS45V2325A04
|
| OCR Text |
matched GaAs FET DESCRIPTION
The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
176.... |
| Description |
2.3 - 2.5GHz BAND 32W INTERNALLY matched GaAs FET
|
| File Size |
235.26K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGFS45V2123A_04 MGFS45V2123A MGFS45V2123A04
|
| OCR Text |
matched GaAs FET DESCRIPTION
The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
176.... |
| Description |
2.1 - 2.3GHz BAND 32W INTERNALLY matched GaAs FET
|
| File Size |
234.61K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGFS45A2527B
|
| OCR Text |
matched GaAs FET DESCRIPTION
The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
176.... |
| Description |
2.5 - 2.7GHz BAND 32W INTERNALLY matched GaAs FET
|
| File Size |
322.71K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
TI store
|
| Part No. |
TRF8010-1998
|
| OCR Text |
...% input return loss (internally matched) p i = 20 dbm 11 db output return loss (externally matched, small signal) p i = 20 dbm 11 db noise power in 30 khz bandwidth 45 mhz offset at p i = 0 dbm 97 dbm harmonics 2f 0 p i = 0 dbm 20 dbc ... |
| Description |
<font color=red>[Old version datasheet]</font> 900-MHz RF TRANSMIT DRIVER
|
| File Size |
184.50K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGFL45V1920A_04 MGFL45V1920A MGFL45V1920A04
|
| OCR Text |
matched GaAs FET DESCRIPTION
The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
176.... |
| Description |
1.9 - 2.0GHz BAND 32W INTERNALLY matched GaAs FET
|
| File Size |
248.84K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
Murata Manufacturing Co...
|
| Part No. |
RX6000
|
| OCR Text |
...ata is given with the ash radio matched to a 50 ohm load. matching component values are given on the next page. 4. see table 1 on page 8 for additional information on ash radio event timing. dimension mm inches min nom max min no... |
| Description |
RFM products are now Murata products
|
| File Size |
234.44K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGFK30V4045_05 MGFK30V4045 MGFK30V404505
|
| OCR Text |
matched GaAs FET DESCRIPTION
The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
OUTL... |
| Description |
14.0-14.5GHz BAND 1W INTERNALLY matched GaAs FET
|
| File Size |
248.01K /
3 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
