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  multi-epitaxial Datasheet PDF File

For multi-epitaxial Found Datasheets File :: 390    Search Time::1.64ms    
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    MA4AGSW4

MACOM[Tyco Electronics]
Part No. MA4AGSW4
OCR Text ...s it ideal for use in microwave multi-throw switch designs, where the series capacitance in each off-arm will load the input. Also, the low series resistance of the diodes helps the total insertion loss of the devices at microwave frequenci...
Description From old datasheet system
AIGAAS SP4T PIN DIODE SWITCH

File Size 236.39K  /  6 Page

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    MA4AGSW8-2

MACOM
Tyco Electronics
Part No. MA4AGSW8-2
OCR Text ...vice ideal for use in microwave multi-throw switch designs. The low series resistance of the diodes reduces the insertion loss of the devices at microwave/millimeter-wave frequencies. These AlGaAs PIN switches are used as switching arrays o...
Description AlGaAs SP8T PIN Diode Switch

File Size 152.09K  /  7 Page

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    NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BLW32
OCR Text ...tter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability ...
Description UHF linear power transistor(UHF线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR

File Size 81.12K  /  12 Page

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    80C32 P87C52IFAA P87C52EFAA P87C52EBPN P87C52IFPN 80C32E 80C32EBAA 80C32EBPN 87C52 87C52EBAA 87C52EBFFA 87C52EBLKA 87C52

PHILIPS[Philips Semiconductors]
Part No. 80C32 P87C52IFAA P87C52EFAA P87C52EBPN P87C52IFPN 80C32E 80C32EBAA 80C32EBPN 87C52 87C52EBAA 87C52EBFFA 87C52EBLKA 87C52EBPN P80C32EFBB P80C32EFPN P80C32IFBB P80C32IFPN P80C32NBAA P80C32NBBB P80C32NBPN P80C32NFAA P80C32NFBB P80C32NFPN P87C52EFBB P87C52EFFFA P87C52EFPN P87C52IBAA P87C52IBFFA P87C52IBLKA P87C52IBPN P87C52IFFFA
OCR Text ...e, a serial I/O port for either multi-processor communications, I/O expansion or full duplex UART, and on-chip oscillator and clock circuits. In addition, the 80C32/87C52 has two software selectable modes of power reduction--idle mode and p...
Description CMOS single-chip 8-bit microcontrollers

File Size 661.77K  /  62 Page

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    BLU99 BLU99_SL

Philips Semiconductors
Part No. BLU99 BLU99_SL
OCR Text ...z mobile radio band. FEATURES * multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile; * gold metallization ensures excellent reliability. The BLU99 has a 4-lead stud envelope with a ceramic cap (...
Description UHF power transistor

File Size 110.25K  /  17 Page

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    BUL742C 9488

STMICROELECTRONICS[STMicroelectronics]
Part No. BUL742C 9488
OCR Text ...manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an ...
Description From old datasheet system
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 278.01K  /  7 Page

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    ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUL742 7933
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintening the wide...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
From old datasheet system

File Size 111.12K  /  5 Page

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    BUL49D

Seme LAB
STMicroelectronics
Part No. BUL49D
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. The BUL49D is designed for use in electronic transformers for halogen lamps. 1 TO-220 INTERNAL SCHEMATIC DIA...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 65.59K  /  6 Page

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    ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BULD118D-1 5247 BULD118
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
From old datasheet system

File Size 71.39K  /  7 Page

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    BUL1102EFP

ST Microelectronics
STMicroelectronics
Part No. BUL1102EFP
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide ...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 216.39K  /  6 Page

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For multi-epitaxial Found Datasheets File :: 390    Search Time::1.64ms    
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