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Avago Technologies Ltd.
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| Part No. |
ASMT-JN31-NUV01
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| OCR Text |
... v is the total luminous fux / radiometric power output as measured with an integrating sphere at 25ms mono pulse condition. 2. flux tolerance is 10 % 5 . 0 4 . 0 4 . 0 0 . 7 1 . 0 0 . 3 1 . 8 5 ? 3 . 7 0 . 8 0 . 6 5 0 . 6 0 ? 1 . 7 0 b o... |
| Description |
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| File Size |
584.87K /
14 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
Q68000-A8000 IRL81 IRL81A
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| OCR Text |
.... A 1 cm2 silicon detector with radiometric filter is aligned with the mechanical axis of the DUT. An aperture is used.
Semiconductor Group
2
IRL 81 A
Relative spectral emission Irel = f ()
Max. forward current IF = f (TA)
... |
| Description |
From old datasheet system
GaAlAs-Infrarot-Sendediode GaAlAs Infrared Emitter
ECONOLINE: RB & RA - Dual Output from a Single Input Rail- Power Sharing on Output- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- Custom Solutions Available- UL94V-0 Package Material- Efficiency to 85% 发动 Infrarot - Sendediode GaAlA红外发射
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| File Size |
151.84K /
3 Page |
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it Online |
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OPTEK[OPTEK Technologies]
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| Part No. |
OP910W
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| OCR Text |
...peak wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested. (3) Junction temperature maintained at 25 o C. (4) To calculate typical dark current in nA, ... |
| Description |
PIN Silicon Photodiode
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| File Size |
605.40K /
2 Page |
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it Online |
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Motorola
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| Part No. |
MPXHZ6115A
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| OCR Text |
...on circuit. notes: 1. device is radiometric within this specifi ed excitation range. 2. offset (v off ) is defined as the output voltage at the minimum rated pressure. 3. full scale output (v fso ) is defined as the output voltage at the m... |
| Description |
(MPXHZ6115A / MPXHA6115A) Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
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| File Size |
273.56K /
12 Page |
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it Online |
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OPTEK[OPTEK Technologies]
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| Part No. |
OP906
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| OCR Text |
...ssion wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested. (4) To calculate typical dark current in nA, use the formula ID = 10(0.042 TA-1.5) where TA ... |
| Description |
PIN Silicon Photodiode
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| File Size |
492.53K /
2 Page |
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it Online |
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OPTEK[OPTEK Technologies]
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| Part No. |
OP905
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| OCR Text |
...ssion wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the photodiode being tested. (4) To calculate typical dark current in nA, use the formula ID = 10(0.042 TA-1.5) where TA ... |
| Description |
PIN Sili con Pho todiode
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| File Size |
483.09K /
2 Page |
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it Online |
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Cree, Inc.
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| Part No. |
XREWHT-L1-0000-00701
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| OCR Text |
...nction temperature (c) relative radiometric output royal blue
copyright ? 2006-2007 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo and xlamp are registered trade... |
| Description |
XLampXR-E LED
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| File Size |
723.25K /
12 Page |
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it Online |
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Price and Availability
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