...e temperature Note: 1. Value at T C = 25C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
2SB857 -70 -50 -5 -4 -8 40 150 -45 to +150
...3
-40
-30
-2
-20
-10 mA IB = 0 -2 -4 -6 -8 -10 Collector to emitter Voltage VCE (V)
0
...
...TC
10
(-60 V, -0.4 A)
n (T C = 25 ) C
1.8 W
0
Ta
150 100 50 Ambient temperature Ta (C) Case temperature TC (C)
2
2SB8...3
-0.4
-2
-0.2 -1 mA
DC Current Transfer Ratio vs. Collector Current Collector to emitter ...
Transistor
2SB873
Silicon PNP epitaxial planer type
For low-frequency power amplification For DC-DC converter For stroboscope
Unit: mm
5.90.2 4.90.2
s Features
q q
+0.3 +0.2
2.540.15
s Absolute Maximum Ratings
Parameter C...
Description
Silicon PNP epitaxial planer type(For low-frequency power amplification)
...103 Non repetitive pulse TC=25C t=0.5ms 1ms
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
-3
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
- 0.3
300ms
1
- 0.1
...
Description
Silicon PNP epitaxial planar type(For power amplification)
...on (ASO)
-10 ICP -3 IC 10ms -1 t=1ms 103 Non repetitive pulse TC=25C
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
- 0.3
3...
Description
Silicon PNP epitaxial planar type(For power amplification)