PART |
Description |
Maker |
AT52BR3228A AT52BR3224A AT52BR3228AT-70CI AT52BR32 |
32-megabit Flash 4-megabit/ 8-megabit SRAM Stack Memory 32兆位闪存4兆位/ 8兆位的SRAM堆栈内存
|
Atmel Corp. Atmel, Corp.
|
SST31LH041 31LH041 |
4 Megabit Flash 1 Megabit SRAM ComboMemory From old datasheet system
|
SST
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SST31LH021 31LH021 |
2 Megabit Flash 1 Megabit SRAM ComboMemory From old datasheet system
|
SST
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AM75DL9608HGT70IT AM75DL9608HGT75IS AM75DL9608HGT7 |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 64兆位个M x 16位)2兆位米16位).0伏的CMOS只,同时作业闪存,和 64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc. Xilinx, Inc. Spansion, Inc.
|
AM50DL9608GT75IS AM50DL9608GT75IT AM50DL9608GT70IS |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit
|
SPANSION[SPANSION]
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S29GL064N90DFI040 S29GL064N90BFI033 S29GL032N90TFI |
4M X 16 FLASH 3V PROM, 90 ns, PBGA64 9 X 9 MM, LEAD FREE, FBGA-64 4M X 16 FLASH 3V PROM, 90 ns, PBGA48 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
|
Spansion, Inc. SPANSION LLC
|
HY29F080 HY29F080G12 HY29F080G70 HY29F080G90 HY29F |
8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory 8 Megabit (1M x 8), 5 Volt-only, Flash Memory IC,EEPROM,NOR FLASH,1MX8,CMOS,TSOP,40PIN,PLASTIC From old datasheet system
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HYNIX[Hynix Semiconductor]
|
SST49LF020-33-4C-WH SST49LF020-33-4C-NH SST49LF020 |
2 Megabit LPC Flash 2兆位LPC闪光 2 Megabit LPC Flash 256K X 8 FLASH 3V PROM, 11 ns, PDSO32 2 Megabit LPC Flash 256K X 8 FLASH 3V PROM, 11 ns, PQCC32
|
Silicon Storage Technol... Microchip Technology, Inc. Silicon Storage Technology, Inc.
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AM27C1024 AM27C1024-120DC5 AM27C1024-120DC5B AM27C |
Quad 2-input exclusive-NOR gates with open collector outputs 14-SOIC 0 to 70 Quad 2-input exclusive-NOR gates with open collector outputs 14-PDIP 0 to 70 1 Megabit (65 K x 16-Bit) CMOS EPROM 1兆位5亩16位)的CMOS存储 1 Megabit (65 K x 16-Bit) CMOS EPROM 64K X 16 UVPROM, 55 ns, CDIP40 Quadruple 2-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SO 0 to 70 1兆位5亩16位)的CMOS存储 1 Megabit (65 K x 16-Bit) CMOS EPROM 1兆位65亩16位)的CMOS存储 64K X 16 UVPROM, 70 ns, CDIP40 1 megabit CMOS EPROM
|
AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC SPANSION LLC
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28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)EEPROM 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
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Maxwell Technologies, Inc
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