| PART |
Description |
Maker |
| FM2G75US60 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 75A条一（c
Molding Type Module
|
Sharp, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRGTI050U06 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C)
|
|
| IXGQ100N60Y4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)
|
|
| VII125-12G4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 125A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 125A条一（c
|
IXYS, Corp.
|
| SIM100D06AV1 |
“HALF-BRIDGE?/a> IGBT MODULE
“HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
| GP200MHS18 |
Half Bridge IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| DIM200WHS17-A000 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| BSM150GB170DN2E3166 150B17E2 C67070-A2709-A67 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 50MT060WH 50MT060WHT |
600V Warp 20-100 kHz Half-Bridge IGBT in a MTP package
HALF-BRIDGE IGBT MTP
|
IRF[International Rectifier]
|
| BSM200GB120DN2 200B12N2 C67070-A2300-A70 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IR3101 |
BRUSH DC MOTOR CONTROLLER, 1.6 A, PSIP9
Intelligent Power Module. Gate Driver IC integrated with a half bridge FredFET Designed for sub 250W Motor Drive applications in a 9-Lead SIP. RDSon of 1.0 Ohm
Intelligent Power Module.Gate Driver IC integrated with a half bridge FredFET Designed for sub 250
Half-Bridge FredFet and Integrated Driver
RESISTOR 5.6 OHM 35W TO220
|
IRF[International Rectifier]
|
