| PART |
Description |
Maker |
| MSM521218 |
65,536-Word ?18-Bit CMOS STATIC RAM(64k瀛??8浣????AM)
65,536-Word x 18-Bit CMOS STATIC RAM
From old datasheet system
65,536-Word ×18-Bit CMOS STATIC RAM(64k字8位静态RAM) 65,536字18位的CMOS静态RAM4K的字× 18位静态RAM）的
|
OKI SEMICONDUCTOR CO., LTD.
|
| CXK77V1810TM CXK77V1810GB CXK77V1810GB_TM |
65,536-Word-by-18-Bit High-Speed CMOS Synchronous Static RAM(65,536× 18位高速CMOS同步静态RAM)
From old datasheet system
|
Sony Corporation
|
| UPD43256 UPD43256-15 UPD43256-10L |
32,768 x 8-BIT STATIC MIX-MOS RAM 32,768 × 8位静态混合马鞍山内存
|
NEC, Corp.
NEC Corp.
|
| MH8S64AQFC-7L |
536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM
|
Mitsubishi Electric Corporation
|
| IS24C02A-3ZLA3 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
天津新技术产业园区管理委员会
|
| 24C016 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
|
Integrated Silicon Solution Inc
|
| M5M4416P M5M4416P-12 M5M4416P-15 |
65536 Bit (16384 Word by 4 Bit) Dynamic Ram
65,536-BIT (16,384-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MSM51V257CLL |
32,768-Word ×8-Bit CMOS STATIC RAM(32k字位静态RAM)
From old datasheet system
32,768-Word x 8-Bit CMOS STATIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
|
| M5K4164AL-12 M5K4164AL-15 |
65 536 BIT DYNAMIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TC511664B TC511664BJ TC511664BJ-10 TC511664BJ-80 T |
65,536 WORD x 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| TC55V1664FT-12 TC55V1664FT-13 TC55V1664FT-15 |
65,536-WORD BY 16-BIT CMOS STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
