| PART |
Description |
Maker |
| AS193-000 |
AS193-000:PHEMT GaAs IC High Linearity 3 V Control|DC-6 GHz Plastic Packaged and Chip|SPST
PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions
|
| HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
| AS193-000 |
PHEMT GaAs IC High-Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions Inc.
|
| FP1510SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD2250SOT89CE FPD2250SOT89 FPD2250SOT89E FPD2250S |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| FPD6836SOT343 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| EB1500DFN-AJ FPD1500DFN1 |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
http://
Filtronic Compound Semiconductors
|
| LP1500SOT89 |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD1050SOT89 FPD1050SOT89E |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
