PART |
Description |
Maker |
IRF7201 IRF7201PBF IRF7201TR |
Generation V Technology 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
IRF7506PBF IRF7506 IRF7506TRPBF IRF7406PBF IRF7506 |
Generation V Technology HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm) ULTRA LOW ON RESISTANCE
|
IRF[International Rectifier]
|
IRL3103D1PBF |
Generation 5 Technology
|
International Rectifier
|
IRF7404TRPBF |
generation v technology
|
International Rectifier
|
IRF7304 |
Generation V Technology
|
International Rectifier
|
SH10DC40 |
Latest generation MOSFET technology
|
Teledyne Technologies I...
|
IKW15N120T2 IKW15N120T208 |
Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology
|
Infineon Technologies AG
|
IRLML5103PBF11 IRLML5103TRPBF |
Lead-Free, Fast Switching, Available in Tape and Reel generation v technology
|
International Rectifier
|
KRF7379 |
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge
|
TY Semiconductor Co., Ltd
|
IRF7304TR |
Generation V Technology -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
SGW25N12009 SGW25N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|