| PART |
Description |
Maker |
| A62S6316V-70SI |
64K X 16 BIT LOW VOLTAGE CMOS SRAM
|
AMIC Technology
|
| BS616LV1010 BS616LV1010AC BS616LV1010AI BS616LV101 |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| KM68U512B |
64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BS616UV1010EI BS616UV1010 BS616UV1010AC BS616UV101 |
Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
|
| AT27LV1026 AT27LV1026-35 AT27LV1026-35JC AT27LV102 |
High Speed CMOS Triple 2-Channel Analog Multiplexers/Demultiplexers 16-TSSOP -55 to 125 64K X 16 OTPROM, 55 ns, PDSO40
High Speed CMOS Triple 2-Channel Analog Multiplexers/Demultiplexers 16-TSSOP -55 to 125 64K X 16 OTPROM, 45 ns, PDSO40
1-Megabit 2 x 32K x 16 16-Bit Interleaved Low-Voltage OTP EPROM 64K X 16 OTPROM, 35 ns, PDSO40
1-Megabit 2 x 32K x 16 16-Bit Interleaved Low-Voltage OTP EPROM 64K X 16 OTPROM, 35 ns, PQCC44
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| IS62WV6416BLL-55B2I IS62WV6416ALL-55B2I IS62WV6416 |
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc.
|
| AS6C1016-55BIN AS6C1016-55ZIN |
64K X 16 BIT LOW POWER CMOS SRAM
|
List of Unclassifed Manufacturers
|
| KM64258C |
64K x 4 Bit(with OE)High-Speed CMOS Static RAM(64K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM64258E |
64K x 4 Bit(with OE)High-Speed CMOS Static RAM(64K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
