| PART |
Description |
Maker |
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| ATF-13100 ATF-13100-GP3 |
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| ATF-13336 ATF-13336-STR ATF-13336-TR1 |
2-16 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF10100 |
0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| TMT-4-0503 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLT-13-6015 TLT-13-6014 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLT-8-2015 |
Temperature Compensated Low Noise Amplifier 2 GHz - 8 GHz
|
Teledyne Technologies Incorporated
|
| TMT-4-0504 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLA-13-6014 TLA-13-6012 TLA-13-6013 |
Low Noise Amplifier 6 GHz - 13 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
| CLA-18-6006 CLA-18-6005 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
