PART |
Description |
Maker |
HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5(VDD)在2.5(提供VDDQ)V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO) x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation Integrated Silicon Solution, Inc. Lattice Semiconductor, Corp.
|
MB84VD22387EJ-90-PBS MB84VD22396EJ-90-PBS MB84VD22 |
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM 32M的(x16)的闪存16M内存(x16)的SRAM接口的FCRAM 32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM SPECIALTY MEMORY CIRCUIT, PBGA71 ER 9C 9#16 SKT RECP WALL SPECIALTY MEMORY CIRCUIT, PBGA71
|
Spansion Inc. Spansion, Inc.
|
VG3617161BT |
x16 CMOS SDRAM From old datasheet system
|
VSI
|
MB84VD22281EA MB84VD22281EA-90-PBS MB84VD22281EE M |
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM POT 2.0K OHM 1/4 SQ CERM SL MT 32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71
|
Fujitsu Component Limited. Fujitsu Limited Fujitsu, Ltd.
|
VG37648041AT |
256M:x4, x8, x16 CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
MX27C8100PC-20 27C8100-10 27C8100-12 27C8100-15 27 |
8M-BIT [1M x8/512K x16] CMOS OTP ROM
|
MCNIX[Macronix International]
|
MX27C8100 MX27C8100MC-10 MX27C8100MC-12 MX27C8100M |
8M-BIT [1M x8/512K x16] CMOS OTP ROM
|
MCNIX[Macronix International]
|
MX29F1615 |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
|
MCNIX[Macronix International]
|
SST39W800A-90-4I-M2KE SST39W800A-90-4I-M2QE SST39W |
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加
|
Silicon Storage Technology, Inc.
|