| PART |
Description |
Maker |
| NTE980 |
Integrated Circuit CMOS, Micropower Phase-Locked Loop (PLL)
Integrated Circuit CMOS Micropower Phase-Locked Loop (PLL)
|
NTE[NTE Electronics]
|
| NTE1534 |
Integrated Circuit CMOS, Phase Lock Loop (PLL) Frequency Synthesizer for AM/FM Radio
Integrated Circuit CMOS / Phase Lock Loop (PLL) Frequency Synthesizer for AM/FM Radio
|
NTE[NTE Electronics]
|
| NTE1814 |
Integrated Circuit CMOS, Color Processing Circuit for VCR
|
NTE[NTE Electronics]
|
| TC55V8200FT-12 TC55V8200FT-15 TC55V8200FT-10 |
2,097,152-WORD BY 8-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55V11601FT-15 |
16,777,216-WORD BY 1-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| NTE1754 |
2.5-V Integrated Reference Circuit 8-SOIC 0 to 70
Integrated Circuit Vertical Deflection Output Circuit
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| TC51WKM616AXBN75 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| TC51WHM616AXBN65 TC51WHM616AXBN70 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| NTE843 |
Integrated Circuit TV Video IF Phase Locked Loop (PLL) Synchronous Detector
|
NTE[NTE Electronics]
|
| NTE1096 |
Integrated Circuit TV AFT, High Frequency Wide-Band Amplifier/Phase Detector
|
NTE[NTE Electronics]
|
