| PART |
Description |
Maker |
| PTF210451 PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| MAPLST0822-002PP |
RF Power Field Effect Transistor LDMOS, 800-2200 MHz, 2W, 28V
|
Tyco Electronics
|
| PTF080101M |
High Power RF LDMOS Field Effect Transistor 10 W, 450 ?960 MHz
|
Infineon Technologies AG
|
| MAPLST0810-090CF MAPLST0810-090CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
|
MACOM[Tyco Electronics]
|
| PTF180601 PTF180601C PTF180601E |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦，DCS / PCS的兆赫波8050年，1930-1990兆赫
LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
