PART |
Description |
Maker |
FM2G75US60 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 75A条一(c Molding Type Module
|
Sharp, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRGTI050U06 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C)
|
|
DIM200PHM33-F000 |
Half Bridge IGBT Module 200 A, 3300 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD Dynex Semiconductor, Ltd.
|
DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
DIM400PHM17-A000-15 |
IGBT Half Bridge Module
|
Dynex Semiconductor
|
SIM75D06AV1 |
“HALF-BRIDGE IGBT MODULE
|
SemiWell Semiconductor
|
DIM200WHS12-E000 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
BSM150GB170DN2E3166 150B17E2 C67070-A2709-A67 |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BSM300GA170DN2E3166 300A17E2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) From old datasheet system
|
Siemens Semiconductor Group Infineon
|