PART |
Description |
Maker |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
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ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST PLD IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3 IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩ 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes In-System Programmable High Density PLD 100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
|
ISPLSI1016EA ISPLSI1016EA-100LJ44 ISPLSI1016EA-100 |
125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD In-System Programmable High Density PLD 200 MHz in-system prommable high density PLD
|
Lattice Semiconductor
|
1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68 :4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
|
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
ISPLSI2064V-100LJ84 ISPLSI2064V-100LJ84I ISPLSI206 |
3.3V High Density Programmable Logic 3.3V High Density Programmable Logic 3.3高密度可编程逻辑 3.3V High Density Programmable Logic EE PLD, 15 ns, PQCC84
|
Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
GM194 |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
ATV750 ATV750-20DM ATV750-20DM_883 ATV750-20GM ATV |
THERMISTOR GLASS 250 OHM DO-35 UV PLD, 25 ns, CDIP24 THERMISTOR GLASS 1K OHM DO-35 OT PLD, 25 ns, PDIP24 THERMISTOR GLASS 10K OHM DO-35 OT PLD, 25 ns, PDIP24 THERMISTOR GLASS 30K OHM DO-35 UV PLD, 25 ns, CDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDSO24 High Density UV Erasable Programmable Logic Device UV PLD, 20 ns, CDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PQCC28 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, CQCC28 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, CDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PDIP24
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
ISPLSI5512VA-70LB388 ISPLSI5512VA-70LB272 ISPLSI55 |
Electrically-Erasable Complex PLD In-System Programmable 3.3V SuperWIDEHigh Density PLD In-System Programmable 3.3V SuperWIDE High Density PLD In-System Programmable 3.3V SuperWIDE?High Density PLD
|
Lattice Semiconductor Corporation
|
SCHJ22.5K SCHJ15K SCHJ45K SCHJ37.5K |
High Voltage,High Density Standard Recovery Rectifier(反向电压45000V,温5℃时平均整流电流50mA,高压,高密度,标准恢复整流器) 高电压,高密度标准恢复整流(反向电压45000V,温5℃时平均整流电流0mA,高压,高密度,标准恢复整流器) High Voltage,High Density Standard Recovery Rectifier(反向电压37500V,温5℃时平均整流电流50mA,高压,高密度,标准恢复整流器) High Voltage,High Density Standard Recovery Rectifier(反向电压22500V,温5℃时平均整流电流50mA,高压,高密度,标准恢复整流器) STANDARD RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Semtech Corporation
|