| PART |
Description |
Maker |
| 27C4096 W27C4096 W27C4096-12 W27C4096P-15 W27C4096 |
256K X 16 ELECTRICALLY ERASABLE EPROM
256K ′ 16 ELECTRICALLY ERASABLE EPROM
From old datasheet system
|
Winbond Electronics
WINBOND[Winbond]
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| IS25C256 IS25C128 |
(IS25C128 / IS25C256) 128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| X2816AM |
2048 x 8-Bit / Electrically EPROM
ELECTRICALLY ERASABLE PROM
|
Xicor Inc.
|
| ISPLSI2096A-100LT128 ISPLSI2096A-125LT128 ISPLSI20 |
Electrically-Erasable Complex PLD
Electrically-ErasableComplexPLD
|
|
| GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| IS25C128-2WLI IS25C128-3WLA3 IS25C128-3GLA3 |
128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM 16K X 8 SPI BUS SERIAL EEPROM, PDSO8
|
Integrated Silicon Solution, Inc.
|
| IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道，双循环取消选择静态RAM
256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100
256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
|
| ATF16V8B-15PC ATF16V8B ATF16V8B-10PC ATF16V8B/BQ/B |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
ATF16V8B/BQ/BQL [Updated 4/01. 19 Pages] 250 gate electrically erasable PLD. 20 pins
From old datasheet system
250 gate electrically erasable PLD, 20 pins
|
Atmel, Corp.
Atmel Corp
|
| 29F002 MX29F002BQI-12 MX29F002NBQI-12 MX29F002TPI- |
DIODE SCHOTTKY 15V 2X20A TO247AD
DIODE SCHOTTKY 45V 2X20A TO247AD
MOSFET N-CH 500V 14A TO-247AD
Low Cost Precision Difet Operational Amplifier 8-SOIC 0 to 70
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32
IC MOSFET DRIVER LS 4A DUAL 8DIP 256K X 8 FLASH 5V PROM, 90 ns, PQCC32
MOSFET N-CH 500V 20A TO-247AD 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| GS880V37BGT-333I GS880V37BGT-360I GS880V37BT-360 G |
256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 1.8 ns, PQFP100
|
GSI Technology, Inc.
GSI[GSI Technology]
|
