| PART |
Description |
Maker |
| CR08AS-12 |
Low Power Use Non-Insulated Type
|
Guangdong Kexin Industr...
|
| CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| BCR08AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| BCR3AM |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 低功率的用途非绝缘型，平面型钝
|
Mitsubishi Electric, Corp.
|
| CR3JM |
LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR2AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR08AS-15 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Renesas Electronics Corporation
|
| CR2AM |
LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR3EM |
LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR5PM |
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRG7PH28UD1PBF IRG7PH28UD1MPBF IRG7PH28UD1PBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
Low switching losses
|
International Rectifier
|
| 19025-0002 19025-0008 64001-1400 64001-1700 64001- |
.187 Tab Size Nylon Insulated and Fully Insulated Quick Disconnect Solderless Terminals
|
MolexKits
|
