| PART |
Description |
Maker |
| BZG05C BZG05C10 BZG05C100 BZG05C11 BZG05C12 BZG05C |
High Precision 10 V Reference; Package: CHIPS OR DIE; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
High Precision 10 V Reference; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
2.5 V/3.0 V Ultrahigh Precision Bandgap Voltage Reference; Package: PDIP; No of Pins: 8; Temperature Range: Industrial 硅的Z -二极
High Precision 10 V Reference; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
Silicon Z-Diodes 硅的Z -二极
High Precision 10 V Reference; Package: CerDIP; No of Pins: 8; Temperature Range: Military
Silicon Z-Diode(稳压应用电压范围3.3-100V的齐纳二极管)
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| AM27C1024-300DIB AM27C1024-350/BUA AM27C1024-205DC |
Constant Frequency Current Mode Step-Up DC/DC Controller in SOT-23; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C
High Efficiency Monolithic Synchronous Step-Down Regulator; Package: MSOP; No of Pins: 8; Temperature Range: -40°C to 125°C
Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C
Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C
150mA, Micropower, Low Noise, VLDO Linear Regulator; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C
High Efficiency Thermoelectric Cooler Controller; Package: QFN; No of Pins: 32; Temperature Range: -40°C to 125°C
High Efficiency Thermoelectric Cooler Controller; Package: SSOP; No of Pins: 28; Temperature Range: -40°C to 125°C
Micropower, Regulated 3.3V/5V Charge Pump with Shutdown in SOT-23; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C
8-Channel, 12-Bit, 1.25Msps Sampling ADCs; Package: SSOP; No of Pins: 48; Temperature Range: 0°C to 70°C
x16 EPROM x16存储
Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C
|
OlympicControls, Corp.
|
| 3141 A3143 UGN3120ELT UGN3120EUA UGN3120LLT UGN312 |
SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION 敏感的霍尔效应开关高温作
IC SENSOR 1 CHAN QTOUCH SOT23-6
(UGN3141 - UGN3144) SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION
Sensitive Hall-Effect Switches, High-Temperature
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
http://
|
| T1010H-6G T1010H-6G-TR T1010H-6T T1010H-6T-TR T101 |
High-temperature 10A sensitive gate Triacs
High temperature 10 A sensitive TRIACs
600 V, 10 A, TRIAC, TO-220AB
|
ST Microelectronics
STMicroelectronics
|
| TC1046VNB TC1046 TC1046VNBTR |
High Precision Temperature-to-Voltage Converter
The TC1046 is a linear output temperature sensor whose output voltage is directly proportional to measured temperature. The TC1046 ...
The TC1046 is a linear output temperature sensor whose output voltage is directly proportional to measured temperature. The TC1046 can accurately measure temperature from -40C to 125C. The output voltage range for this device is typically
|
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| SM6HT24A SM6HT27A SM6HT36A SM6HT43A 6565 SM6HTXXA |
From old datasheet system
HIGH TEMPERATURE TRANSIL FOR AUTOMOTIVE APPLICATIONS
HIGH TEMPERATURE TRANSILTM FOR AUTOMOTIVE APPLICATIONS
|
STMICROELECTRONICS[STMicroelectronics]
|
| SB3H100-E3_54 SB3H100-E3_73 SB3H90 SB3H9008 SB3H10 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| T2035H-600TRG T2035H-600G-TR T2035H T2035H-600G T2 |
Snubberless?/a> high temperature 20 A Triacs
Snubberless high temperature 20 A Triacs
Snubberless⑩ high temperature 20 A Triacs
|
STMicroelectronics
|
| TZ150N22KOF TZ150N18KOF TZ150N24KOF TZ150N26KOC |
High junction temperature Transil 晶闸管模块|可控硅| 2.2KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 1.8KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.4KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.6KV五（无线资源管理）| 223A我（翻译
|
Infineon Technologies AG
|
| HVS2512 HVS1210 HVS4020 HVS1206 |
High Voltage / High Temperature Thick Film Chip Resistors
|
Riedon Powertron
|
