| PART |
Description |
Maker |
| SD200N04PV SD200N08PV SD200N16PV SD200N20PC SD200N |
800V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
1600V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
2000V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
2400V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
|
International Rectifier
|
| IRKHF200-02GP IRKKF200-06HP IRKHF200-06GP IRKHF200 |
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CC|600V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CC|400V V(RRM)|200A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|200V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CC|800V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CA|400V V(RRM)|200A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|600V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|200V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增| 200伏五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 400V五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 400V五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|200V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 200伏五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR|DUAL|CA|400V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 400V五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 800V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|CC|1.2KV V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 1.2KV五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.2KV五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR|DUAL|CC|600V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|消委会| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|CC|1KV V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 1KV交五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1KV交五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|CC|200V V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 200伏五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 800V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|200A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1KV V(RRM)|200A I(T)
THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CA|1KV V(RRM)|200A I(T)
|
Microchip Technology, Inc.
STMicroelectronics N.V.
IXYS, Corp.
Glenair, Inc.
L-com, Inc.
Powerex, Inc.
|
| PCHMB200A6A |
IGBT MODULE Chopper 200A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| FMG1G200US60H |
600V, 200A IGBT Module (Molding Type)
|
Fairchild Semiconductor
|
| PP200T060 |
POW-R-PAK 200A / 600V 3 phase IGBT Assembly
|
POWEREX[Powerex Power Semiconductors]
|
| 203DNQ100 203DNQ080 |
100V 200A Schottky DOUBLER Diode in a TO-244AB Non-Isolated package
80V 200A Schottky DOUBLER Diode in a TO-244AB Non-Isolated package
From old datasheet system
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| 203CNQ100R 203CNQ080 203CNQ080R 203CNQ100 203CNQ10 |
SCHOTTKY RECTIFIER
100V 200A Schottky Common Anode Diode in a TO-244AB Non-Isolated package
100V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
80V 200A Schottky Common Anode Diode in a TO-244AB Non-Isolated package
80V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
SCHOTTKYRECTIFIER
SCHOTTKY RECTIFIER 肖特基整流器
100 A, 100 V, SILICON, RECTIFIER DIODE, TO-244AB
|
IRF[International Rectifier]
InternationalRectifier
International Rectifier, Corp.
|
| IRG4BC10SD-L IRG4BC10SD-S |
600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package
600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
|
IRF[International Rectifier]
|
| IRGS30B60 IRGSL30B60K IRGS30B60K IRGB30B60K |
600V UltraFast 10-30 kHz IGBT in a TO-262 package
600V UltraFast 10-30 kHz IGBT in a D2-Pak package
600V UltraFast 10-30 kHz IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 2MBI200S-120 |
1200V / 200A 2 in one-package
|
ETC
|
| GM200HB12CT |
1200V/200A 2 IN ONE PACKAGE
|
KEC(Korea Electronics)
|
| IRGSL4B60KD1 IRGS4B60KD1 IRGB4B60KD1 |
600V Low-Vceon Non Punch Through Copack IGBT in a TO-262 package
600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package
600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
