PART |
Description |
Maker |
BAS516 |
High Spee d Switching Diode
|
Chendahang Electronics ...
|
2SA1010 2SA1010-15 |
SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
|
Renesas Electronics Corporation
|
2SC3569 |
Silicon transistor NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
|
NEC http://
|
2SC4418 |
Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍扩散平面晶体管(高压和高速开关晶体管 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
|
Sanken Electric Co., Ltd. SANKEN[Sanken electric]
|
2SA1743 |
Silicon powor transistor PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING From old datasheet system
|
NEC
|
2SC1621 2SC1621-L 2SC1621-T2B 2SC1621-T1B |
Silicon transistor HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
2SA1647-Z 2SA1647-15 |
SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
Renesas Electronics Corporation
|
BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve... From old datasheet system NPN Silicon Transistors with High Reverse Voltage Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN Silicon RF Transisrors NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管(高耐压l低集电极发射极饱和电压)
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation Toshiba Semiconductor
|
BFS483 Q62702-F1574 Q62702F1574 |
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA) NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管(对于低噪声,高增益的colector2mA至二十八毫安目前的宽带放大器 NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR TRANSISTOR R.F SOT363 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|