| PART |
Description |
Maker |
| BBY55 BBY55-02V BBY55-03W BBY55-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
Silicon Tuning Diodes
|
INFINEON[Infineon Technologies AG]
|
| BB555 BB555-02V BB535 |
Varactordiodes - Silicon variable capacitance diode for UHF TV tuners
Varactordiodes - Silicon variable capacitance diode for UHF and TV/TR tuners
Silicon Tuning Diode
|
Infineon Technologies AG
Siemens Semiconductor Group
|
| BB867 BB867-02V |
Silicon Tuning Diode
Varactordiodes - SAT Tunerdiode
|
Infineon Technologies A...
Infineon Technologies AG
|
| BB689-02V |
Varactordiodes for Tunerapplications
|
Infineon
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| 2SA1010 2SA1010-15 |
SILICON POWER TRANSISTOR
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
|
Renesas Electronics Corporation
|
| Q62702-F722 BFP23 BFP26 Q62702-F622 |
PNP Silicon Transistor with high Reve...
From old datasheet system
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A- |
Low-frequency high-gain amplification silicon Tr.
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
| 2SC2369 2SC1560 2SC1988 2SC2570 NE02100 NE02103 NE |
NPN SILICON HIGH FREQUENCY TRANSISTOR
NPN SILICON HIGH FREQUNY TRANSISTOR NPN硅晶体管高FREQUNY
NPN SILICON HIGH FREQUNY TRANSISTOR NPN硅晶体管FREQUNY
|
NEC[NEC]
NEC Corp.
Honeywell International, Inc.
NEC, Corp.
|
| TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation
Toshiba Semiconductor
|
| HFM306 HFM308 HFM301 HFM305 |
SMD, High Efficient Rectifier, 600V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 1000V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 50V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 400V, 3A, Silicon Diode
|
Rectron Semiconductor
|
| RUR-D820 RUR-D815 RUR-D810 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 200 V.
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 150 V.
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 100 V.
|
General Electric Solid State
|
