| PART |
Description |
Maker |
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| ND4131-3D |
2 W, 4 V, C-band power GaAs MESFET
|
NEC
|
| NE650107700 |
L/S BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs
|
| NE9000 NE900000 NE900000G NE900075 NE900089A NE900 |
Ku-BAND MEDIUM POWER GaAs MESFET
|
NEC
|
| NEZ1011-3E |
X BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| CLX27-05 CLX27-10 |
HiRel X-Band GaAs Power-MESFET
|
Infineon Technologies A...
|
| NE650103M |
NECS 10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
ETC[ETC]
|
| NEZ1414-2E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| CLX34-10 CLX34 CLX34-00 CLX34-05 |
HiRel X-Band GaAs Power-MESFET
伊雷X波段砷化镓功率场效应
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| NE500199 NE500100 |
(NE500100 / NE500199) C-Band Medium Power GaAs MESFET
|
NEC Electronics
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
