| PART |
Description |
Maker |
| SI2300 |
VDS=20V,RDS(ON)=40m VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m
|
TY Semiconductor Co., Ltd
|
| KI5904DC |
Drain-Source Voltage VDS 20V Gate-Source Voltage VGS -12V
|
TY Semiconductor Co., Ltd
|
| KI1902DL |
Drain-source voltage Vds 20V Gate-source voltage Vgs -12V
|
TY Semiconductor Co., L...
|
| KI5902DC |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| PT7A7515 PT7A7513 PT7A7535 PT7A7531 |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:67A; On-Resistance, Rds(on):7.9mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:D2PAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
3.08V Reset Active Low Supervisor
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
|
| KX7N10L |
VDS (V) = 100V RDS(ON) 350m (VGS = 10V), ID=0.85A RDS(ON) 380m (VGS = 5V), ID=0.85A
|
TY Semiconductor Co., Ltd
|
| 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| AMS431 AMS431A AMS431AL AMS431AM AMS431AN AMS431AS |
PRECISION ADJUSTABLE SHUNT REGULATOR 精密可调并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):0.09ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):0.28ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| 5N20V |
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., Ltd
|
| KI1302DL |
Drain-source voltage VDS 30 V Gate-source voltage VGS -20 V
|
TY Semiconductor Co., Ltd
|
| NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
