Part Number Hot Search : 
SV310 F4465 TCS3772 35L6GT 0624I ZT651 SL74HCT 230D6
Product Description
Full Text Search

FTD2012 - N- Channel Silicon MOS FET Load S/W USE

FTD2012_266429.PDF Datasheet

 
Part No. FTD2012
Description N- Channel Silicon MOS FET Load S/W USE

File Size 11.28K  /  1 Page  

Maker


Sanyo Semicon Device



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: FTD2011A
Maker:
Pack:
Stock:
Unit price for :
    50: $0.26
  100: $0.25
1000: $0.23

Email: oulindz@gmail.com

Contact us

Homepage http://www.semic.sanyo.co.jp/index_e.htm
Download [ ]
[ FTD2012 Datasheet PDF Downlaod from Datasheet.HK ]
[FTD2012 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for FTD2012 ]

[ Price & Availability of FTD2012 by FindChips.com ]

 Full text search : N- Channel Silicon MOS FET Load S/W USE
 Product Description search : N- Channel Silicon MOS FET Load S/W USE


 Related Part Number
PART Description Maker
2SK1611 V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
Panasonic Semiconductor
http://
2SK215 2SK214 2SK213 2SK216 Silicon N-Channel MOS FET 硅N沟道场效应晶体管
Silicon N Channel MOS FET
Hitachi,Ltd.
Hitachi Semiconductor
MP4203 TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE
Toshiba Semiconductor
MP4703 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
ETC[ETC]
HAF2015RJ Thermal MOS FETs
SILICON N CHANNEL MOS FET SERIES POWER SWITCHING
HITACHI[Hitachi Semiconductor]
MP4411 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-PIE-MOSV in One)
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
2SK1739A FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
Toshiba Semiconductor
2SK1310A FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
TOSHIBA
UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
NEC[NEC]
2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 From old datasheet system
P-CHANNEL MOS FET FOR HIGH SWITCHING
P-channel MOS FET (-30V, -2A)
NEC[NEC]
 
 Related keyword From Full Text Search System
FTD2012 Technique FTD2012 Logic FTD2012 Derating Rule FTD2012 Programmable FTD2012 speed
FTD2012 dropout FTD2012 hlmp FTD2012 equivalent ic FTD2012 inductors FTD2012 upload
 

 

Price & Availability of FTD2012

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.9242448806763