| PART |
Description |
Maker |
| MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors
COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTW8N50E |
TMOS E FET POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| MGSF3454VT1 MGSF3454VT1_D ON1906 MGSF3454VT1-D ON1 |
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA INC
|
| MTA1N60E |
FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR
Fully Isolated TMOS E-FET / Power Rifld Effect Transistor
|
MOTOROLA[Motorola, Inc]
|
| MTP8N50E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTM60N06 MTM55N10 |
(MTM55N10 / MTM60N06) N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
Motorola
|
| MTD3055E1 |
TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount
|
Motorola, Inc.
|
