| PART |
Description |
Maker |
| AGB3302S24Q1 AGB3302 |
The AGB3302 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
ANADIGICS, Inc.
|
| AGB3303S24Q1 AGB3303 |
The AGB3303 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
50 OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| 1SS378 |
DIODE (HGIH SPEED SWITCHING)
|
Toshiba Corporation
Toshiba Semiconductor
|
| RF2442PCBA-H RF2442PCBA-L RF2442PCBA-M RF24421 |
HIGH-LINEARITY LOW NOISE AMPLIFIER
|
RF Micro Devices
|
| FPD2250SOT89CE FPD2250SOT89 FPD2250SOT89E FPD2250S |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| FP1510SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD6836SOT343 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD750SOT343CE EB750SOT343-AH EB750SOT343-BA EB750 |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
