| PART |
Description |
Maker |
| K4R881869 K4R881869M K4R881869M-NCK8 K4R881869M-NB |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
Samsung Electronic
SAMSUNG [Samsung semiconductor]
SAMSUNG[Samsung semiconductor]
|
| K4R571669D |
256/288Mbit RDRAM(D-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4R881869D K4R571669D |
256/288Mbit RDRAM(D-die)
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MBM29F040A-90 |
4M (512K ×8) BIT Flash Memoery(512K ×85V 电源电压闪速存储器)
|
Fujitsu Limited
|
| MBM29F800B-12 MBM29F800B-90 MBM29F800T-12 MBM29F80 |
8M (1M ×8/512K ×6) Bit Falsh Memory(V 电源电压1M ×8/512K ×6位闪速存储器)
|
Fujitsu Limited
|
| MBM29LV004TC-12 MBM29LV004TC-12PNS MBM29LV004TC-12 |
FLASH MEMORY 4M (512K x 8) BIT
4M (512K X 8) BIT
|
Fujitsu Microelectronics
|
| A29040AL-55 A29040AL-70 A29400UV-70 A2918EWH A2918 |
512K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
Dual full-bridge PWM motor driver
|
AMIC Technology
Allegro MicroSystems
|
| IDT71V424L IDT71V424S10PH IDT71V424S10PHG IDT71V42 |
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) 512K X 8 STANDARD SRAM, 15 ns, PDSO44
TRANS NPN W/RES 60 HFE NS-B1 512K X 8 STANDARD SRAM, 10 ns, PDSO36
TRANS NPN W/RES 80 HFE NS-B1
3.3V 512K x 8 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| MX26LV040PC-55 MX26LV040QC-55 MX26LV040TC-55G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDIP32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PQCC32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
|
| MX29LV040CTC-12 MX29LV040CTC-12G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| 79LV2040RPFE-20 79LV2040RPFH-20 79LV2040RPFK-20 79 |
20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM 512K X 40 EEPROM 3V, 250 ns, PDFP100
|
Maxwell Technologies, Inc
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
