PART |
Description |
Maker |
PDTC114E PDTC114EE PDTC114EEF PDTC114EK PDTC114EM |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm NPN配电阻型晶体R1=10千欧姆,R2=10千欧 NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ NPN resistor-equipped transistor; R1 = 10 k楼?, R2 = 10 k楼?
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NXP Semiconductors N.V.
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PDTC143Z PDTC143ZE PDTC143ZEF PDTC143ZM PDTC143ZS |
NPN resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN resistor-equipped transistors; R1 = 4.7 kW R2 = 47 kW NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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PDTC144E PDTC144EU PDTC144EE PDTC144EEF PDTC144EK |
PDTC144E series; NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 47 kOhm NPN resistor-equipped transistors; R1 = 47 k ohm, R2 = 47 k ohm
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PHILIPS[Philips Semiconductors] NXP Semiconductors
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PEMD6 PEMD6_2 |
From old datasheet system NPN/PNP RESISTOR-EQUIPPED TRANSISTORS; R1 = 4.7 KOHM, R2 = OPEN NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm/ R2 = open
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NXP Semiconductors Philips Semiconductors
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PDTC143XU PDTC143X PDTC143XEF PDTC143XK PDTC143XM |
NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
PDTC123ET PDTC123E PDTC123EE PDTC123EEF PDTC123EK |
NPN resistor-equipped transistors; R1 = 2.2 k惟, R2 = 2.2 k惟 NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
|
NXP Semiconductors
|
PDTC124XEF |
NPN resistor-equipped transistor
|
Philips
|
PDTC124ES |
NPN resistor-equipped transistor
|
Philips
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