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IRHG6110 - Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB

IRHG6110_309819.PDF Datasheet
 
Part No. IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF IRHG6110-15
Description Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
File Size 191.89K  /  14 Page  

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IRF[International Rectifier]

Homepage http://www.irf.com/
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 Full text search : Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB

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