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M24C08-W - 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes CRYSTAL 9.84375MHZ 10PF SMD UHF power transistor NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; G_UM: 7 dB; G_UM @ f1: 7 dB; I_C: 250 mA; P_tot: 250 mW; Polarity: NPN ; VCEO max: 8 V CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD MMIC variable gain amplifier AB 3C 3#12 SKT RECP Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator Schottky barrier double diodes - C_d max.: 100@VR=4V pF; Configuration: dual c.a. ; I_F: 1 A; I_FSM max: 10 A; I_R max: 1@VR=25V mA; V_Fmax: 450@IF=1A mV; V_R: 25 V XTL, OSC, 50.000 MHZ, 100PPM Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Schottky barrier diode - C_d max.: 10@VR=1V pF; Configuration: single ; I_F max: 200 mA; I_FSM max: 300 A; I_R max: 2.3@VR=25VA; V_Fmax: 400@IF=10mA mV; V_R max: 30 V CONNECTOR ACCESSORY PNP/PNP matched double transistors IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP AB 17C 17#16 PIN RECP 45 V, 100 mA NPN general-purpose transistors NPN/PNP general purpose transistor - Description: Matched Pair IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015 CRYSTAL 4.897MHZ 20PF SMD Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; V_DRM: 650 V Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; V_DRM: 800 V POT 200 OHM 3/4 RECT CERM MT Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; V_DRM: 500 V Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; V_DRM: 600 V Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes PowerMOS transistor Logic level TOPFET - @ V_IS: 5 V; I_D: 15 A; Number of pins: 3 ; R_DS(on): 0.125 mOhm; V_DSmax: 50 V Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes CRYSTAL 6.7458MHZ 20PF SMD Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes RES ARRAY 24 OHM 8TRM 4RES SMD SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300 High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; V

M24C08-W_328632.PDF Datasheet

Part No.

M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S

Description

16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM
Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
CRYSTAL 9.84375MHZ 10PF SMD
UHF power transistor
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; G_UM: 7 dB; G_UM @ f1: 7 dB; I_C: 250 mA; P_tot: 250 mW; Polarity: NPN ; VCEO max: 8 V
CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 SKT RECP
Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
Schottky barrier double diodes - C_d max.: 100@VR=4V pF; Configuration: dual c.a. ; I_F: 1 A; I_FSM max: 10 A; I_R max: 1@VR=25V mA; V_Fmax: 450@IF=1A mV; V_R: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Schottky barrier diode - C_d max.: 10@VR=1V pF; Configuration: single ; I_F max: 200 mA; I_FSM max: 300 A; I_R max: 2.3@VR=25VA; V_Fmax: 400@IF=10mA mV; V_R max: 30 V
CONNECTOR ACCESSORY
PNP/PNP matched double transistors
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpose transistors
NPN/PNP general purpose transistor - Description: Matched Pair
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015
CRYSTAL 4.897MHZ 20PF SMD
Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; V_DRM: 650 V
Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; V_DRM: 800 V
POT 200 OHM 3/4 RECT CERM MT
Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; V_DRM: 500 V
Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; V_DRM: 600 V
Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
PowerMOS transistor Logic level TOPFET - @ V_IS: 5 V; I_D: 15 A; Number of pins: 3 ; R_DS(on): 0.125 mOhm; V_DSmax: 50 V
Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes
CRYSTAL 6.7458MHZ 20PF SMD
Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
RES ARRAY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300
High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz wideband transistor
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
HDWR PLATE SER 3 FRNT MNT BLK
OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD
Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V
Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM

File Size

144.80K / 25 Page

Maker

意法半导
EEPROM
STMicroelectronics N.V.

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Part: M24C08-WBN6

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