| PART |
Description |
Maker |
| ZVN2106G ZVN2106GTA |
N-channel MOSFET
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Zetex Semiconductors
Diodes
|
| ZXMN10A08GTA ZXMN10A08 ZXMN10A08G |
100V SOT223 N-channel enhancement mode MOSFET
|
ZETEX[Zetex Semiconductors]
|
| ZXMN6A25GTA |
60V SOT223 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| ZVN4210G ZVN4210GTA |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Zetex Semiconductors
http://
Diodes Incorporated
|
| ZVN4206G ZVN4206GTA |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
http://
|
| ZVN2110G |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
Zetex Semiconductors
|
| ZVN0545G ZVN0545GTA |
0.14 A, 450 V, 50 ohm, N-CHANNEL, Si, POWER, MOSFET
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
N-channel MOSFET
|
Diodes Incorporated
Zetex Semiconductors
|
| ZVN4206GV ZVN4206V UZVN4206GV ZVN4206GVTA |
1 A, 60 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
N-channel MOSFET
|
ZETEX PLC
Diodes Incorporated
Zetex Semiconductors
http://
|
| MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system
P-CHANNEL ENHANCEMENT?ODE
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| ZVN3310F ZVP3310F ZVP3310FTA ZVP3310F-15 |
SOT23 P-CHANNEL ENHANCEMENT SOT23 P-CHANNEL ENHANCEMENT
SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
|
| BCP69 BCP69-10 BCP69-16 BCP69-25 |
PNP Silicon AF Transistor
General Purpose Transistors - SOT223; VCEO=20V; hFE=160..375
General Purpose Transistors - SOT223; VCEO=20V; hFE=85..160
General Purpose Transistors - SOT223; VCEO=20V; hFE=100..250
|
Infineon Technologies A...
Infineon Technologies AG
|
| IXTH40N30NBSP IXTH40N30 IXTM40N30 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET)
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET)
From old datasheet system
N-Channel Enhancement MOSFET
|
IXYS Corporation
|
