Part Number Hot Search : 
PCS3060P 2SC4596E 44MTD BAS516 SFR6011 BAS70 2SA766 SEMIX353
Product Description
Full Text Search

MTP1N60ED - TMOS POWER FET 1.0 AMPERES 600 VOLTS From old datasheet system

MTP1N60ED_340602.PDF Datasheet


 Full text search : TMOS POWER FET 1.0 AMPERES 600 VOLTS From old datasheet system


 Related Part Number
PART Description Maker
MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
MTP10N60E7 ON2541 MTP10N60E7-D TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
ON Semiconductor
MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
MOTOROLA[Motorola, Inc]
ON Semiconductor
MTP60N06 MTP60N06HD MTP60N06HD_D ON2633 From old datasheet system
TMOS POWER FET 60 AMPERES 50 VOLTS
TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM
MOTOROLA[Motorola, Inc]
ON Semi
MTP12P10 MTP12P10_D ON2547 From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM
MOTOROLA[Motorola, Inc]
ON Semi
MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D TMOS E-FET Power Field Effect Transistor
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
MTP3N120E_D ON2600 MTP3N120E-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
ON Semiconductor
MTD3N25E MTD3N25E-D TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
ON Semiconductor
MOTOROLA[Motorola, Inc]
MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system
ON Semiconductor
ETC
Motorola, Inc
MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229 TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS
From old datasheet system
TMOS P-CHANNEL FIELD FEECT TRANSISTOR
MOTOROLA[Motorola, Inc]
MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
ETC
Motorola, Inc
ON Semiconductor
 
 Related keyword From Full Text Search System
MTP1N60ED series MTP1N60ED intersil MTP1N60ED coilcraft MTP1N60ED Gain MTP1N60ED Range
MTP1N60ED Bandwidth MTP1N60ED power suppiy MTP1N60ED mode MTP1N60ED transient design MTP1N60ED datasheet | даташит
 

 

Price & Availability of MTP1N60ED

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.26828002929688