| PART |
Description |
Maker |
| BGD904 BGD904MI |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
|
| CGD91401 9397-750-08861 CGD914MI |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
|
| BGD904MI BGD904 |
860 MHz, 20 dB gain power doubler amplifier
|
Philips
|
| CGD914MI CGD914 CGD914_MI_6 CGD914-2015 |
860 MHz, 20 dB gain power doubler amplifier
From old datasheet system
|
Quanzhou Jinmei Electro...
Philips
|
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| BGD802 |
860 MHz, 18.5 dB gain power doubler amplifier
From old datasheet system
CATV WIDEBAND AMPLIFIER,HYBRID,SOT-115J,PLASTIC
|
Philips Semiconductors
|
| BGX885N_5 BGX885N01 BGX885N-2015 BGX885N-15 BGX885 |
From old datasheet system
860 MHz, 17 dB gain push-pull amplifier
|
Philips
Quanzhou Jinmei Electro...
http://
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| HW8185 |
40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
FREESCALE SEMICONDUCTOR INC
|
| AWB7225 |
860 MHz to 894 MHz Small-Cell Power Amplifier Module
|
Anadigics, Inc.
|
