| PART |
Description |
Maker |
| 1N5300 1N5301 1N5287 1N5296 1N5314 1N5313 1N5295 1 |
CURRENT LIMITER FIELD EFFECT DIODES
MOSFET P-CH 45V 230MA TO-92
MOSFET N-CH 200V 120MA TO-92
|
KNOX[Knox Semiconductor Inc]
KNOX[Knox Semiconductor, Inc]
Knox Semiconductor Inc
|
| NIMD6302R2 |
HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET
HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET
|
ONSEMI[ON Semiconductor]
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| J113 J112 J111 |
RES CURRENT SENSE .005 OHM .75W
N-channel silicon field-effect transistors
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 2SK364 |
Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
|
TOSHIBA
|
| 2SJ104 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
|
TOSHIBA
|
| MSP5286-1 MSP5288-1 MSP5294-1 SMBJ5304 MSP5287-1 M |
Current Limiter Diode
|
Microsemi
|
| JANS1N5287UR-1 1N5310UR-1 JANTXV1N5313UR-1 JANS1N5 |
Current Limiter Diode
|
Microsemi
|
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| SSM3J120TU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch Applications High-Current Switching Applications
|
Toshiba Semiconductor
|
